Electronic Devices Import Data of Russia

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Lookup import statistics of Electronic Devices under HS Code 8541290000, which Russia imports from Taiwan China. Study market price & market size of Electronic Devices along with market share of Russian companies importing Electronic Devices from Taiwan China

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DATE HS_CODE Product Description TrademarkCountry Net Weight Statistical Cost Place Shipper NameConsignee Name
2017-09-048541290000SEMICONDUCTOR DEVICES: Field transistors TYPE SEMICONDUCTOR - GAAS (gallium arsenide) is not a phototransistor, power dissipation 7,7VT, designed for use in industrial electronic power amplifier; NOT SCRAP: Electrical***TAIWAN CHINA0.655716,32*************
2017-09-058541290000TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source 950, CURRENT LEAKAGE 38 A, the power dissipation***TAIWAN CHINA0.16186,68*************
2017-09-068541290000TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. VOLTAGE Drain-Source Breakdown 70 V, 35 A LEAKAGE CURRENT, POWER 40 CS. lint***TAIWAN CHINA18.85141,75*************
2017-09-218541290000Other transistors, phototransistor EXCEPT: MOSFETs with channel N type intended for devices of industrial electronics. Breakdown voltage of the drain-source of 100 V, 1.7 A LEAKAGE CURRENT, POWER 2 watts. CASING SOT-223-4. LOCATED in the tape, pack***TAIWAN CHINA0.012,75*************
2017-09-218541290000Other transistors, phototransistor EXCEPT: MOSFETs with channel N TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. VOLTAGE Drain-Source Breakdown 25 V, 60 A LEAKAGE CURRENT, power dissipation 3W. HOUSING***TAIWAN CHINA0.0215,82*************
2017-09-228541290000MOSFETs with channel N type intended for devices of industrial electronics. Breakdown voltage of the source-drain 60, 57 LEAKAGE CURRENT A POWER 92 CS. BODY TO-220AB. LOCATED in the box. : INFINEON TECHNOLOGIES INFINEON IRFZ44VZPBF-ND (IRF***TAIWAN CHINA3.15894,31*************
2017-09-278541290000Other transistors, phototransistor EXCEPT: a bipolar transistor PNP TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. Collector-emitter voltage of 80 V, the collector current of 1.5 A, power dissipation 1.25 CS. CASE S***TAIWAN CHINA0.056,35*************
2017-09-278541290000Other transistors, phototransistor EXCEPT: insulated-gate bipolar transistor (IGBT-transistors), for use in the electronics industry DEVICES. MAXIMUM CURRENT COLLECTOR 35 A collector-emitter voltage 1200 V,***TAIWAN CHINA0.0234,13*************
2017-11-178541290000FIELD voltage of the transistor -20V, power dissipation 1.56VT are designed for portable electronic devices civil purposes, NOT AN ELECTRICAL CROWBAR.WITHOUT A TRADEMARKTAIWAN CHINA19.818254,63TAIPEI**********


Our electronic devices import data of Russia and market research report covers market priceof electronic devices and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of electronic devices in Russia. Few shipment records with a small number of important columns from Russia import data of electronic devices are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of electronic devices. To view more shipment records of electronic devices import data of Russia, you can set a filter by Country Name, HS Code and Place.

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