DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-05 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | ROHM, FARNELL, INFINEON, NEXPERIA | *** | 52.56 | 578,16 | MOSCOW | ***** | ***** |
2017-09-11 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | INFINEON, NXP | *** | 119.35 | 1312,85 | MOSCOW | ***** | ***** |
2017-09-11 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | INFINEON | *** | 72.04 | 1793,8 | MOSCOW | ***** | ***** |
2017-09-11 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | INFINEON | *** | 71.73 | 2044,31 | MOSCOW | ***** | ***** |
2017-09-19 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | INFINEON, NEXPERIA, ON SEMICONDUCTOR | *** | 54.28 | 1546,98 | MOSCOW | ***** | ***** |
2017-11-06 | 8541290000 | TRANSISTORS Power Dissipation 1 W, EXCEPT phototransistor, for telecommunications equipment that is not yavl. CROWBAR electrical equipment, not yavl. Radio electronic facilities and high frequency devices: CHINA | HUAWEI | CHINA | 0.02 | 0,66 | MOSCOW | ***** | ***** |
2017-11-15 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | INFINEON TECHNOLOGIES AG | *** | 1.34 | 183,81 | MOSCOW | ***** | ***** |
2017-11-15 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | INFINEON, INFINEON TECHNOLOGIES AG, NEXPERIA | *** | 94.3 | 2659,26 | MOSCOW | ***** | ***** |
2017-11-15 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS | INFINEON TECHNOLOGIES AG | *** | 11.9 | 360,57 | MOSCOW | ***** | ***** |
2017-11-21 | 8541290000 | TRANSISTORS PURPOSE. Designed for use in amplifiers and generators of electronic devices. Power dissipation 10 Tues. Not for military purposes. HAVE encryption means (CRYPTOGRAPHY) TOTAL 442 PCS. | ABSENT | CHINA | 1.768 | 427,44 | MOSCOW | ***** | ***** |