DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PNP-CHANNEL, power dissipation 0.5 | *** | CHINA | 1.19 | 90 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 0.57 | *** | CHINA | 0 | 4 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 0.54 | *** | CHINA | 0.01 | 10,2 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, NPN-CHANNEL, power dissipation 0.3 | *** | CHINA | 0.03 | 2,1 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 0.7 | *** | CHINA | 0 | 1,45 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 0.9 | *** | CHINA | 0.02 | 20 | *** | ***** | ***** |
2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: bipolar transistors for use in telecommunica | *** | TAIWAN CHINA | 0 | 2,38 | *** | ***** | ***** |
2017-09-10 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, NPN-CHANNEL, power dissipation 0.1 | *** | TAIWAN CHINA | 0.01 | 0,4 | *** | ***** | ***** |
2017-09-10 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: bipolar transistors for use in telecommunica | *** | TAIWAN CHINA | 0.02 | 13,07 | *** | ***** | ***** |
2017-09-22 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: bipolar transistors for use in telecommunica | *** | CHINA | 0.12 | 23,35 | *** | ***** | ***** |