DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-07 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 8 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | 0.01 | 5 | *** | ***** | ***** |
2017-09-14 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 1 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | 0 | 135 | *** | ***** | ***** |
2017-09-14 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0.01 | 5,5 | *** | ***** | ***** |
2017-09-29 | 8542326900 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 3.6 V Operating temperature from - 40 to + 85 4GB: MICRON WITHOUT TK B / M MT29F4G01ADAGDWB-IT: G B / M 2 | *** | TAIWAN CHINA | 0 | 20,76 | *** | ***** | ***** |
2017-09-30 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0.02 | 31,5 | *** | ***** | ***** |
2017-11-12 | 8542326900 | Electronic integrated circuits Monolithic collected, SINGLE: electrically erasable programmable read-only memory (EEPROM FLASH-ES) with a storage capacity of 256 Gbps, DO NOT WASTE NOT | MICRON | TAIWAN CHINA | 7.29 | 79598,27 | VILNIUS | ***** | ***** |
2017-11-21 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | TAIWAN CHINA | 46.55 | 32200 | ST PETERSBURG | ***** | ***** |
2017-11-24 | 8542326900 | Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL | MICRON | TAIWAN CHINA | 25.27 | 17480 | ST PETERSBURG | ***** | ***** |
2017-11-27 | 8542326900 | Electronic integrated circuits Monolithic collected, SINGLE: electrically erasable programmable read-only memory (EEPROM FLASH-ES) with a storage capacity of 256 Gbps, DO NOT WASTE NOT | MICRON | TAIWAN CHINA | 8.2 | 105927,68 | VILNIUS | ***** | ***** |