DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-04 | 8542329000 | Memory (not ELECTRICAL SCRAP ARE NOT encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE UNITED STATES Electronic integrated circuits solid -. Memory EPROM 1MB (128KX8) MICROCHIP None None AT27C010-45JU 5 | *** | PHILIPPINES | 0 | 25,31 | *** | ***** | ***** |
2017-09-06 | 8542329000 | MICROCHIP MTFC8GACAANA-4M IT MICROCIRCUIT MTFC8GACAANA-4M IT IS A BUILT-volatile flash memory (EMMC memory) with a storage capacity 8 GB. It HAS A PART OF MULTIMEDIACARD (MMC) controller and Memory Type NAND FLASH. In a 100-pin package | *** | CHINA | 0.3 | 1019,95 | *** | ***** | ***** |
2017-09-06 | 8542329000 | ELECTRONIC COMPONENTS FOR GENERAL USE FOR OWN PRODUCTION UNITS Electronic Equipment - Electronic integrated circuits, monolithic (chip) MICROCHIP buffer / line driver, voltage 1.65-3.6V TEXAS INSTRUMENTS TEXAS INS | *** | CHINA | 0.03 | 21,51 | *** | ***** | ***** |
2017-09-12 | 8542329000 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - STORAGE DEVICE TYPE ferroelectric memory (F-RAM) C VOLUME 2 MB. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC): CYPRESS SEMICONDUCTOR CORPORATION WITHOUT A TRADEMARK | *** | SINGAPORE | 0.05 | 158,52 | *** | ***** | ***** |
2017-09-16 | 8542329000 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic represents a ferroelectric memory device provided with random access (FRAM) with a storage capacity of up to 512 kbps, VOLTAGE | *** | JAPAN | 0.05 | 20,41 | *** | ***** | ***** |
2017-09-18 | 8542329000 | Memory (not ELECTRICAL SCRAP ARE NOT encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE Electronic integrated circuits solid -. MEMORY EEPROM 64KX8 - 2.5V MICROCHIP MISSING - 24LC512T-I / SM 2000 | *** | CHINA | 0.54 | 782,47 | *** | ***** | ***** |
2017-09-19 | 8542329000 | INTEGRATED MONOLITHIC analog ICs SRAM with the sampling in order, APPARATUS USED IN CIVIL do not apply to means of fire control, NOT the encryption function (CRYPTOGRAPHY): Microcircuits | *** | CHINA | 0.01 | 330,41 | *** | ***** | ***** |
2017-09-21 | 8542329000 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - STORAGE DEVICE TYPE ferroelectric memory (F-RAM) C of 4 kbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): CYPRESS SEMICONDUCTOR WITHOUT TRADEMARK B / N FM24C | *** | CHINA | 0.01 | 20,09 | *** | ***** | ***** |
2017-09-22 | 8542329000 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic represents a ferroelectric memory device provided with random access (FRAM) With the memory to 64K VOLTAGE | *** | CHINA | 0 | 1,83 | *** | ***** | ***** |
2017-09-22 | 8542329000 | Monolithic integrated circuits - memory device: monolithic integrated circuits - programmable microcontroller (PLD / FPGA - Programmable logic integrated circuits / FPGA - configuration memory IC - SER CONFIG MEM FLASH 16MB 33. | *** | MALAYSIA | 0.6 | 1767,31 | *** | ***** | ***** |