DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | CHINA | 0.74 | 2362,6 | *** | ***** | ***** |
2017-09-01 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | CHINA | 0.44 | 187,39 | *** | ***** | ***** |
2017-09-08 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....) Of the electronic integrals | *** | THAILAND | 0.38 | 400,58 | *** | ***** | ***** |
2017-09-08 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....) Of the electronic integrals | *** | THAILAND | 0.18 | 991,03 | *** | ***** | ***** |
2017-09-08 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....) Of the electronic integrals | *** | THAILAND | 1.16 | 2511,25 | *** | ***** | ***** |
2017-09-18 | 8542326100 | The memory device FLASH EEPROM MEMORY TO 512 MBIT (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE WITHOUT JOM elect AND Electrot nodes, not for secret and recording of information, without the module TPM.....) MICROCIRCUIT AM29F080B-90EF; TO | *** | MALAYSIA | 0.07 | 44,47 | *** | ***** | ***** |
2017-09-21 | 8542323900 | Read only memory (CD. Stack dynamic random access memory) for passenger electric. Lifshitz TOV MOD.KONE MONOSPACE T / P to 2500kg (ON) SKOR.DO 2.5m / C (ON) (NOT OR SCRAP EL.OB. EL.TEH.UZLY) SM.DOPOLNENIE memory chip 128X870NSDIP | *** | FINLAND | 0.02 | 16,87 | *** | ***** | ***** |
2017-09-22 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | MOROCCO | 1.26 | 1204,03 | *** | ***** | ***** |
2017-09-26 | 8542323100 | Read only memory (CD. Stack dynamic random access memory) for PASS.ELEKTR. ELEVATOR MOD.KONE MONOSPACE T / P to 2500kg (ON) SKOR.DO 3.0m / C (ON) (NOT OR SCRAP EL.OB. EL.TEH.UZLY FOR GR.PRIM NOT -VA POZH.AVT) SM.DOPOLNENIE MICROCIRCUIT PA | *** | FINLAND | 0.2 | 372,56 | *** | ***** | ***** |
2017-09-26 | 8542323100 | Read only memory (CD. Stack dynamic random access memory) for PASS.ELEKTR. ELEVATOR MOD.KONE MONOSPACE T / P to 2500kg (ON) SKOR.DO 3.0m / C (ON) (NOT OR SCRAP EL.OB. EL.TEH.UZLY FOR GR.PRIM NOT -VA POZH.AVT) SM.DOPOLNENIE MICROCIRCUIT PA | *** | FINLAND | 0.1 | 181,11 | *** | ***** | ***** |