DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | MOS transistors for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on 100 BREAKDOWN VOLTAGE | *** | TAIWAN CHINA | 0.2 | 1821,32 | *** | ***** | ***** |
2017-09-01 | 8541290000 | MOS transistors for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 | *** | TAIWAN CHINA | 0 | 3,09 | *** | ***** | ***** |
2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES: Field transistors TYPE SEMICONDUCTOR - GAAS (gallium arsenide) is not a phototransistor, power dissipation 7,7VT, designed for use in industrial electronic power amplifier; NOT SCRAP: Electrical | *** | TAIWAN CHINA | 0.65 | 5716,32 | *** | ***** | ***** |
2017-09-05 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source 950, CURRENT LEAKAGE 38 A, the power dissipation | *** | TAIWAN CHINA | 0.16 | 186,68 | *** | ***** | ***** |
2017-09-06 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. VOLTAGE Drain-Source Breakdown 70 V, 35 A LEAKAGE CURRENT, POWER 40 CS. lint | *** | TAIWAN CHINA | 18.8 | 5141,75 | *** | ***** | ***** |
2017-09-07 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. 3 A permissible current, | *** | TAIWAN CHINA | 0.07 | 1,52 | *** | ***** | ***** |
2017-09-07 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 100 A | *** | TAIWAN CHINA | 0.25 | 5,62 | *** | ***** | ***** |
2017-09-07 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 6.25 | *** | TAIWAN CHINA | 3.06 | 69,63 | *** | ***** | ***** |
2017-09-07 | 8541290000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-channel available power dissipation 2.5 | *** | TAIWAN CHINA | 13.46 | 397,33 | *** | ***** | ***** |
2017-09-07 | 8541290000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-channel available power dissipation 2.5 | *** | TAIWAN CHINA | 8.87 | 198,6 | *** | ***** | ***** |