| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541409000 | Photosensitive semiconductor devices (phototransistor), NOT SCRAP ELEKTROOBOR. NOT FOR ZHEL.-DOR.TRANSP. NOT FOR KOLESN.TRANSP. MEANS FOR HOUSEHOLD APPLIANCES "SAMSUNG" MODULE infrared receiver for surface mounting - ASSEMBLY WITH photodiode preamplifier | *** | KOREA REPUBLIC OF | 1 | 536,68 | *** | ***** | ***** |
| 2017-09-02 | 8541210000 | TRANSISTORS Power Dissipation 0.197 BT TYPE SEMICONDUCTOR SILICON-: TRANSITION TYPE - NPN.VID POLUPROVODNIKA- KREMNIEVYY.PRIMENENIE: SILICON BIPOLAR RADIO FREQUENCY NPN transistors BFU730F designed for use in low-noise amplifier in the micro | *** | THAILAND | 0.02 | 341,43 | *** | ***** | ***** |
| 2017-09-02 | 8541290000 | Semiconductor field-effect transistors are designed for use in power amplifiers TELECOMMUNICATIONS SECTORS / NOT SCRAP, WASTE NOT / NOT WAR, NOT DUAL-USE / NO for equipment operating in explosive atmospheres / SEMICONDUCTOR | *** | JAPAN | 4.84 | 74625,41 | *** | ***** | ***** |
| 2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES: Field transistors TYPE SEMICONDUCTOR - GAAS (gallium arsenide) is not a phototransistor, power dissipation 7,7VT, designed for use in industrial electronic power amplifier; NOT SCRAP: Electrical | *** | TAIWAN CHINA | 0.65 | 5716,32 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | TRANSISTORS PURPOSE. Designed for use in amplifiers and generators of electronic devices. Power dissipation 10 Tues. Not for military purposes. HAVE encryption means (CRYPTOGRAPHY) TOTAL 108 PCS. : Transistors TRANSISTOR | *** | CHINA | 1.08 | 1106,07 | *** | ***** | ***** |
| 2017-09-05 | 8541100009 | DIODES: Adjustable Resistor DIODES MA4P604-131 COMPANY MACOM, SMD, used primarily as a nonlinear element in a frequency multiplier, and for amplification of the oscillations in parametric amplifiers and ultra HIGH | *** | UNITED STATES | 0.03 | 801 | *** | ***** | ***** |
| 2017-09-05 | 8541401000 | The laser diode for use in fiber-optic technique of laser diode modules the PLD-1064 SM, are used to create pulses of which are further amplified in the fiber amplifier IPG LASER GMBH, GERMANY NONE | *** | GERMANY | 1.5 | 27603 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | TRANSISTORS PURPOSE. Designed for use in amplifiers and generators of electronic devices. Power dissipation of 5-10 V. NOT MILITARY. HAVE encryption means (CRYPTOGRAPHY) TOTAL 43 PCS. : Transistors TRANSISTOR | *** | CHINA | 0.04 | 54,3 | *** | ***** | ***** |
| 2017-09-07 | 8541290000 | Transistors, radio-electronic components of a semiconductor material is used for amplifying, oscillating, switching and converting electrical signals. TRANSISTORS APPLY amplifier circuits, signal generators, N- TYPE ASSEMBLY OF TWO | *** | CHINA | 0.02 | 0,83 | *** | ***** | ***** |
| 2017-09-10 | 8541290000 | Semiconductor field-effect transistors are designed for use in power amplifiers telecommunications industry / NOT SCRAP, WASTE NOT, NOT MILITARY OR DUAL-USE NOT for equipment operating in explosive atmospheres / semiconductor | *** | JAPAN | 11.86 | 222812,68 | *** | ***** | ***** |