DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-04 | 8541401000 | SEMICONDUCTOR DEVICES: LAMP LED LED-M88-150W / DW / E40 / FR ALV01WH LED LAMP WITH opal diffuser. BODY MATERIAL ALYUMINIY.TSVET GLOW DNEVNOY.SERIYA VENTURO.TM UNIEL. UNIEL LIGHTING CO., LTD. NO 10 | *** | RUSSIA | 10 | 823,44 | *** | ***** | ***** |
2017-09-12 | 8541100009 | SEMICONDUCTOR DIODES, SILICON-DC converters, MEDIUM 10A forward current, reverse voltage 200V NO MORE, NOT CONTAIN components made of superconducting materials other than semiconductor devices IMAGING:, | *** | RUSSIA | 3.65 | 672,45 | *** | ***** | ***** |
2017-09-18 | 8541401000 | ELECTRIC LAMP LED (LED) VOLTAGE -230, color temperature - 4500K, the luminous flux 800 LM be applicable for lighting in residential, office and warehouse space. LED lamps LED 24W T8 230V / 50HZ COLD MATT (installation is possible after | *** | RUSSIA | 96 | 1728,87 | *** | ***** | ***** |
2017-09-27 | 8541100009 | DIODE MODULE INDUCTOTHERM IP # 818531-PE-30pcs. TU 3417-059-41687291-2012. SILICON MATERIAL. Operating temperature <125 degrees. AS USED IN SEMICONDUCTOR POWER CONVERTERS AND ELECTRICAL in power circuits: DEVICE ABM | *** | RUSSIA | 42.6 | 3984,6 | *** | ***** | ***** |
2017-11-09 | 8541401000 | LEDs designed for use as an emitter in optical devices at a wavelength of 1.9 MCM operates at thermoelectric cooling. POWER 0.6 MW. -NOT CONTAIN components made of superconducting materials; | WITHOUT A TRADEMARK | CHINA | 0.1 | 2146,36 | SHANGHAI | ***** | ***** |
2017-11-14 | 8541409000 | CRYSTALS the photosensitive diode array FM034M in a plate shape is not cut on a chip - 3690 SHT.ISPOLZUYUTSYA IN VARIOUS solid state relays. Not suitable for Space Device Engineering. ARE FREE OF SUPERCONDUCTING MATERIALS. | ABSENT | TAIWAN CHINA | 0.006 | 207,64 | EAGLE | ***** | ***** |
2017-11-24 | 8541409000 | Photovoltaic SEMICONDUCTOR SOLID PCP (SSR) for devices of industrial automation. TYPE SEMICONDUCTOR - multi-element (silicon and gallium arsenide) (NOT SCRAP ELECTRIC NOT FOR NUCLEAR PURPOSES, NOT TO CREATE missile weapons, | IXYS | POLAND | 0.193 | 252 | WARSAW | ***** | ***** |
2017-11-30 | 8541100009 | DIODE D066-12500-4-N-54SHT. TU3417-052-41687291-2011. Material silicon. Operating temperature <125 degrees. AS USED IN SEMICONDUCTOR POWER CONVERTERS AND in power circuits INDUSTRIAL ELECTRICAL DEVICES | The uppercase E crossed-T | REPUBLIC OF ESTONIA | 7.4 | 4601,19 | TALLINN | ***** | ***** |