| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-06 | 3818009000 | Compounds are chemically doped for use in electronics: Plate for light-emitting diodes, cut-on-chip, TYPE PLATES: "DDH689N" - 350 sq cm (. 37 PCS), Chem. COMPOSITION: GA (20-38%) AS (52%) AL (10-28%). : OOO "MEGA EP | *** | RUSSIA | 0.1 | 6456,7 | *** | ***** | ***** |
| 2017-09-14 | 3818009000 | Compounds are chemically doped for use in electronics: Plate for light-emitting diodes, cut-on-chip, TYPE PLATES: "DDH725N" - 200 square centimeters (21 pcs.), "DDH810N" - 200 square centimeters (21 pcs.) , Chem. COMPOSITION: GA (20-38:%) | *** | RUSSIA | 0.1 | 6956,5 | *** | ***** | ***** |
| 2017-09-15 | 3818009000 | SUBSTANCE thermoelectric semiconductor - PREPARATIONS ingot cylindrical Predna. FOR MANUFACTURING Thermoelectric modules, AHF. ON Peltier THIS PRODUCT DOES manufactured in accordance with specifications P-TI | *** | RUSSIA | 30.05 | 15614 | *** | ***** | ***** |
| 2017-09-21 | 3818009000 | Compounds are chemically doped for use in electronics: Plate for light-emitting diodes, cut-on-chip, TYPE PLATES: "DDH740N" - 150 square centimeters (16 pcs.), "DDH660P" - 300 square centimeters (32 pcs.) , Chem. COMPOSITION: GA (20-38:%) | *** | RUSSIA | 0.1 | 8738,33 | *** | ***** | ***** |
| 2017-11-09 | 3818009000 | Compounds are chemically doped for use in electronics: Plate for light-emitting diodes, cut-on-chip, TYPE PLATES: "DDH660P" - 300 square centimeters (40 pcs.), "DDH689N" - 90 square centimeters (10 pcs.) , "DDH660N" - 80 square centimeters (8 | ABSENT | GERMANY | 0.1 | 10113,83 | Kaluga | ***** | ***** |
| 2017-11-10 | 3818009000 | Thermoelectric semiconductor material, produced according to TU 1779-001-11300308-08 used in the production of electronic appliances, for easy and safe transportation to the BOX INVESTED Styrofoam plates and Foam | ABSENT | CHINA | 152.4 | 35490 | SHANGHAI | ***** | ***** |
| 2017-11-14 | 3818009000 | Compounds are chemically doped for use in electronics: PLATE light-emitting DIODOV, cut-on-chip, TYPE PLATES: "DDH660P" - 300 sq cm (. 40 PCS), Chem. COMPOSITION: GA (20-38%) AS (52%) AL (10-28%). | ABSENT | GERMANY | 0.1 | 5771,04 | Kaluga | ***** | ***** |
| 2017-11-14 | 3818009000 | SUBSTANCE thermoelectric semiconductor - PREPARATIONS ingot cylindrical Predna. FOR MANUFACTURING Thermoelectric modules, AHF. ON Peltier THIS PRODUCT DOES manufactured in accordance with specifications | WITHOUT A TRADEMARK | USA | 59.5 | 23172,73 | HAMILTON | ***** | ***** |
| 2017-11-16 | 3818009000 | Test plate INGAN / GAN With heteroepitaxial structures, are designed to produce a detector for electron microscopy and mass spectrometry. OBTAINED BY vapor phase epitaxy of organometallic compounds. CONSISTS OF: With -PODLOZHKA | WITHOUT A TRADEMARK | THE STATE OF ISRAEL | 0.245 | 7840 | REHOVOT | ***** | ***** |
| 2017-11-22 | 3818009000 | Compounds are chemically doped for use in electronics: Plate for light-emitting diodes, cut-on-chip, TYPE PLATES: "DDH660P" - 300 square centimeters (40 pcs.), "DDH725N" - 250 square centimeters (25 pcs.) , "DDH810N" - 250 cm² | ABSENT | GERMANY | 0.1 | 17061,98 | Kaluga | ***** | ***** |