DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-06 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity greater than 512 MBIT: EL.MODUL of RAM 4GB DDR3, is designed to accelerate data exchange with computers, 4 GB and runs at 1866 MHz (COMPLETE WITH A SERVICE | *** | RUSSIA | 0.26 | 64,43 | *** | ***** | ***** |
2017-09-16 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity greater than 512 MBIT: EL.MODUL of RAM 4GB DDR3, is designed to accelerate data exchange with computers, 4 GB and runs at 1866 MHz (COMPLETE WITH A SERVICE | *** | RUSSIA | 0.53 | 125,14 | *** | ***** | ***** |
2017-09-26 | 8542323900 | Dynamic random access memory (DRAM) for computers memory capacity over 512 MBIT WITHOUT encryption function (CRYPTOGRAPHY). MEMORY MODULE FOR COMPUTER DIMM DDR4 8GB PC4-17000 (2133MHZ) NCP MEMORY MODULE FOR COMPUTER DIMM DDR4 4GB PC | *** | RUSSIA | 0.56 | 1059,65 | *** | ***** | ***** |
2017-09-29 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity greater than 512 MBIT: electronic memory modules SO DIMM, for laptops and PCs APPLE, THE YEAR 2017 VYPUSKA- APPLE INC. APPLE. 661-03253 1 | *** | RUSSIA | 0.11 | 17 | *** | ***** | ***** |
2017-11-07 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT intended for installation in a computer-POWERED FROM COMPUTER 1.5V (NOT FOR MILITARY, cryptographic equipment) | CRUCIAL | UKRAINE | 0.55 | 658,91 | *** | ***** | ***** |
2017-11-09 | 8542323900 | Dynamic random access memory (DRAM), a personal computer with memory capacity over 512 MBIT - MODULES RAM of 32GB. | SAMSUNG | UKRAINE | 2.4 | 5377,26 | the village of Krasnaya | ***** | ***** |
2017-11-14 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT. FOR INSTALLATION IN COMPUTER SERVERS NOT SOD. Encryption (cryptographic) means not VOEN.NAZNACHENIYA | CRUCIAL | TAJIKISTAN | 0.102 | 236,73 | DUSHANBE | ***** | ***** |
2017-11-15 | 8542323900 | Integrated circuits, monolithic, digital, dynamic random access memory (DRAM) K4B4G1646D-BCK0, VOLUME 4Gbit, 96 pin input voltage 1.5V, 1W, SIZE 13.3 * 11.0 * 1.1mm, TV MODELS FOR PROM.SBORKI UE40HU7000UXRU, Art .: | SAMSUNG ELECTRONICS | AUSTRIA | 2 | 2383,25 | VEIN | ***** | ***** |
2017-11-15 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity greater than 512 Mb / NOT SCRAP ELECTRIC / FOR MEDICAL EQUIPMENT FOR CIVIL APPLICATION: | HEWLETT PACKARD | FRENCH REPUBLIC | 0.02 | 183,26 | MOSCOW | ***** | ***** |
2017-11-20 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity MORE 512MBIT, semiconductor silicon chips MEMORY used in the manufacture of chips for digital satellite receivers, ARE NOT CROWBAR ELECTRICAL, | WINDBOND | POLAND | 0.705 | 9297,13 | Pruszcz Gdanski | ***** | ***** |