DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-11-01 | 8541300009 | THYRISTOR SILICON diffusely, STRUCTURE PNPN, triode, unclosable, INTENDED FOR USE AS A HIGH POWER switching elements, the DC voltage 500 V, DC 150 A, NOT JOM ELECTRICAL | "BETA ELECTRONICS" | REPUBLIC OF INDIA | 3.214 | 371,32 | MOSCOW | ***** | ***** |
2017-11-03 | 8541210000 | Silicon Transistors, NPN epitaxial-planar Structure for use in amplifiers, pulse and switching devices, the range of operating temperature -60 ... + 125C, for industrial applications: | Fine "Azon" | REPUBLIC OF INDIA | 0.156 | 247,93 | MOSCOW | ***** | ***** |
2017-11-03 | 8541290000 | NPN Silicon Transistors MEZAPLANARNY STRUCTURES FOR A switching device and a power supply constant power dissipation is 50W, for industrial applications: 2T839A | Fine "Elter" | REPUBLIC OF INDIA | 0.149 | 84,59 | MOSCOW | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR SILICON, diffusion, structure PNPN, for use as a switching element, maximum reverse voltage up to 500V, for industrial applications: KU108ZH | Fine "BETA ELECTRONICS" | REPUBLIC OF INDIA | 0.354 | 55,54 | MOSCOW | ***** | ***** |
2017-11-21 | 8541210000 | TRANSISTORS Germanium floatable PNP, TO WORK IN switching circuit, the output stage low frequency amplifiers, converters and voltage stabilizers, OPERATING TEMPERATURE RANGE -60 ... + 70 ° C: P215 | Fine "Azon" | REPUBLIC OF INDIA | 9.278 | 84,62 | MOSCOW | ***** | ***** |