DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-11-03 | 8541210000 | Silicon Transistors, NPN epitaxial-planar Structure for use in amplifiers, pulse and switching devices, the range of operating temperature -60 ... + 125C, for industrial applications: | Fine "Azon" | REPUBLIC OF INDIA | 0.156 | 247,93 | MOSCOW | ***** | ***** |
2017-11-03 | 8541290000 | NPN Silicon Transistors MEZAPLANARNY STRUCTURES FOR A switching device and a power supply constant power dissipation is 50W, for industrial applications: 2T839A | Fine "Elter" | REPUBLIC OF INDIA | 0.149 | 84,59 | MOSCOW | ***** | ***** |
2017-11-03 | 8541210000 | 5.2 PROPERTY According to the list â„– 11430.1787: REF. FOR PERSONS. 11 TRANSISTOR 2T201B - 16 PCS. TRANSISTOR silicon epitaxial-planar amplifying LOW FREQUENCY in metal-glass housing, power dissipation 0,15VT COLLECTOR MAXIMUM VOLT | IZOBRAITELNY SIGN of "silicon" | REPUBLIC OF INDIA | 0.016 | 225,43 | MUMBAI PORT | ***** | ***** |
2017-11-08 | 8541210000 | 4.2 PROPERTY IN LIST â„– 171125-0895 FROM 15/09/17: TRANSISTOR SCHU3.365.007TU 2T203G - 51 pcs; TRANSISTOR ZHK3.365.143TU 2T312B - 28 pcs; TRANSISTOR ZHK3.365.143TU 2T312V - 23 pcs; TRANSISTOR YUF3.365.043TU 2T630B - 28 pcs; MATRIX transistor I93.456.000TU | Not labeled, RUSSIA | REPUBLIC OF INDIA | 0.4 | 8275,49 | Delhi airport | ***** | ***** |
2017-11-08 | 8541210000 | 4.2 PROPERTY IN LIST â„– 171125-0304 FROM 06/04/17: TRANSISTOR AA0.339.517TU 2T214A9 - 55 pcs; TRANSISTOR AA0.339.518TU 2T215A9 - PCS 110; TRANSISTOR TS23.365.008TU 2P307G - 15 PCS. | Not labeled, RUSSIA | REPUBLIC OF INDIA | 0.045 | 4853,7 | AIRPORT Hyderabad | ***** | ***** |
2017-11-08 | 8541210000 | 5.2 PROPERTY According to the list â„– 11430.1788: REF. FOR PERSONS. 11 TRANSISTOR 2T630B - 5 PCS. Bipolar transistors SILICON maximum power dissipation 0.8W, 120V maximum voltage. Provides control of the current in the output circuit DUE TO CHANGE | ABSENT | REPUBLIC OF INDIA | 0.005 | 108,86 | MUMBAI PORT | ***** | ***** |
2017-11-08 | 8541290000 | 5.2 PROPERTY According to the list â„– 11430.1781: REF. FOR PERSONS. 49 TRANSISTOR P210SH - 18 PCS. TRANSISTOR germanium alloyed UNIVERSAL LOW FREQUENCY HIGH POWER, 64B maximum voltage, maximum power dissipation 1.5W. APPLY | IZOBRAITELNY mark of JSC "Plant GAMMA" | REPUBLIC OF INDIA | 0.684 | 372,61 | MUMBAI PORT | ***** | ***** |
2017-11-20 | 8541290000 | BIPOLAR TRANSISTOR SILICON PNP LOW FREQUENCY STRUCTURE, constant power dissipation to 5 watts to the heat sink, the cutoff frequency gain of the CURRENT TRANSISTOR 4MHz, for industrial applications: 2T836A | Fine "Elter" | REPUBLIC OF INDIA | 0.378 | 703,22 | MOSCOW | ***** | ***** |
2017-11-21 | 8541210000 | TRANSISTORS Germanium floatable PNP, TO WORK IN switching circuit, the output stage low frequency amplifiers, converters and voltage stabilizers, OPERATING TEMPERATURE RANGE -60 ... + 70 ° C: P215 | Fine "Azon" | REPUBLIC OF INDIA | 9.278 | 84,62 | MOSCOW | ***** | ***** |