DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-03 | 8541210000 | Silicon Transistors, NPN epitaxial-planar Structure for use in amplifiers, pulse and switching devices, the range of operating temperature -60 ... + 125C, for industrial applications: | Fine "Azon" | REPUBLIC OF INDIA | 0.156 | 247,93 | MOSCOW | ***** | ***** |
2017-11-03 | 8541290000 | NPN Silicon Transistors MEZAPLANARNY STRUCTURES FOR A switching device and a power supply constant power dissipation is 50W, for industrial applications: 2T839A | Fine "Elter" | REPUBLIC OF INDIA | 0.149 | 84,59 | MOSCOW | ***** | ***** |
2017-11-13 | 8541210000 | Silicon Transistors Semiconductor power not exceeding 1 W WITHOUT superconducting and optical elements, the range of operating temperature -60 ... + 125C, for industrial applications: | Fine "Gaul" | PEOPLE'S REPUBLIC OF VIETNAM | 16.334 | 1973,29 | MOSCOW | ***** | ***** |
2017-11-21 | 8541210000 | TRANSISTORS Germanium floatable PNP, TO WORK IN switching circuit, the output stage low frequency amplifiers, converters and voltage stabilizers, OPERATING TEMPERATURE RANGE -60 ... + 70 ° C: P215 | Fine "Azon" | REPUBLIC OF INDIA | 9.278 | 84,62 | MOSCOW | ***** | ***** |
2017-11-24 | 8541290000 | Transistors, solid-state, power dissipation 1 W, NOT SCRAP, NOT FOR F / A TRANSPORTATION NOT FOR RADIATION OF NON MEDICAL NAZNACHENICHYA FOR APPLIANCES SAMSUNG | SAMSUNG GALAXY S | KOREA REPUBLIC OF | 0.01 | 0,01 | MOSCOW | ***** | ***** |
2017-11-30 | 8541290000 | NPN Silicon Transistors MEZAPLANARNYE STRUCTURE FOR WORK in electronic equipment, Maximum Power Dissipation 50W, for industrial applications: | Fine "BETA ELECTRONICS" | PEOPLE'S REPUBLIC OF VIETNAM | 1.74 | 61,54 | MOSCOW | ***** | ***** |