DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541210000 | TRANSISTORS EXCEPT phototransistor dissipation of less than 1 W, spare parts of equipment of cash registers: TRANSISTOR BC817.215, Part Number BC817.215, MOSCHN.RASSEIVANIYA 250 MW NXP SEMICONDUCTORS NXP SEMICONDUCTORS 38361 6000 | *** | *** | 0.23 | 36,6 | *** | ***** | ***** |
2017-09-01 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation less than 1 W, NOT MILITARY TOTAL - 36SHT. Switchboards transistor IGNITION SOATE NO 315120373401001 36 | *** | *** | 11.52 | 255,34 | *** | ***** | ***** |
2017-09-05 | 8541210000 | TRANSISTORS EXCEPT phototransistor dissipation of less than 1 W, spare parts of equipment of cash registers: TRANSISTOR BC817.215, Part Number BC817.215, MOSCHN.RASSEIVANIYA 250 MW NXP SEMICONDUCTORS NXP SEMICONDUCTORS 38361 6000 | *** | RUSSIA | 0.23 | 36,6 | *** | ***** | ***** |
2017-09-18 | 8541210000 | TRANSISTORS dissipation of less than 1W, available as spare parts of the car, NOT MILITARY transistors for automobiles UAZ (131.00-17): TRANSISTOR TK-200 of "ELTRA" None None TC-200 6 OJSC "ELTRA" NO UTS | *** | RUSSIA | 26 | 80,65 | *** | ***** | ***** |
2017-09-18 | 8541210000 | TRANSISTORS P308 silicon planar switching NPN LOW-FREQUENCY thin (0,25VT) for radio compasses ARK-15M civilian helicopter MI-8 TRANSISTOR JSC "VSP-C" G. VORONEZh NONE P308 20 | *** | RUSSIA | 0.03 | 126 | *** | ***** | ***** |
2017-09-19 | 8541210000 | Silicon Transistors Semiconductor power not exceeding 1 W WITHOUT superconducting and optical elements, the range of operating temperature -60 ... + 125C, for industrial applications:: Transistors Transistors TRANSISTOR Transit | *** | RUSSIA | 6.74 | 1543,27 | *** | ***** | ***** |
2017-09-22 | 8541210000 | MODULE TRANSISTOR SEMICONDUCTOR power dissipation 0,96VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). NO MILITARY: MODULE SEMICONDUCTOR TRANSISTORS Power Dissipation | *** | RUSSIA | 0 | 15,63 | *** | ***** | ***** |
2017-09-28 | 8541210000 | TRANSISTORS FOR ELECTRIC DEVICES power transistor 0,23VT: 0,15VT power transistor power transistor 0,50VT "ZAVOD ISKRA", OJSC "Saratov factory reception-intensifying lamps": OAO "ZAVOD ISKRA", OJSC "Saratov factory acceptance-SII | *** | RUSSIA | 0.65 | 129,85 | *** | ***** | ***** |
2017-11-03 | 8541210000 | Silicon Transistors, NPN epitaxial-planar Structure for use in amplifiers, pulse and switching devices, the range of operating temperature -60 ... + 125C, for industrial applications: | Fine "Azon" | REPUBLIC OF INDIA | 0.156 | 247,93 | MOSCOW | ***** | ***** |
2017-11-04 | 8541210000 | TRANSISTORS NOT ELECTRICAL JOM, civil purposes, not radio-electronic means having no encryption function (CRYPTOGRAPHY) INTENDED FOR USE AS A COMPONENT FOR REPAIR OF HOUSEHOLD APPLIANCES SAMSUNG. | SAMSUNG | KINGDOM OF THE NETHERLANDS | 0.09 | 0,08 | Koryakova | ***** | ***** |