DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | Transistors, EXCEPT phototransistor, spare parts of equipment Check-out equipment: TRANSISTOR SI7949DP-T1-E3, Part Number SI7949DP-TI-E3, MOSCHN.RASSEIVANIYA 1.5 W VISHA Y VISHA Y 38321 3000 | *** | *** | 0.74 | 1230 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistors, EXCEPT phototransistor, spare parts of equipment Check-out equipment: TRANSISTOR SI7949DP-T1-E3, Part Number SI7949DP-TI-E3, MOSCHN.RASSEIVANIYA 1.5 W VISHA Y VISHA Y 38321 3000 | *** | RUSSIA | 0.74 | 1230 | *** | ***** | ***** |
2017-09-08 | 8541290000 | KAT. 4.2 Diffusion Silicon Transistors -PLANARNYE FIELD IN VED.â„– 703/2016/4818/50162/5 / LS: 2281 POZ.â„– TRANSISTOR 2P306B- 8 pieces; FOR AIRCRAFT MAINTENANCE "MIG": RUSSIA IS NO 0 | *** | RUSSIA | 0.02 | 11,94 | *** | ***** | ***** |
2017-09-15 | 8541290000 | TRANSISTORS NOT ELECTRICAL JOM, civil purposes, not radio-electronic means having no encryption function (CRYPTOGRAPHY) INTENDED FOR USE AS A COMPONENT FOR REPAIR OF HOUSEHOLD APPLIANCES SAMSUNG. Transistors power | *** | RUSSIA | 0.06 | 3,48 | *** | ***** | ***** |
2017-09-19 | 8541290000 | Silicon Transistors epitaxial planar structure amplifying NPN, Power dissipation 2W: pos.9 transistor CT 972B, 972B-ART.KT 10pcs .; Pos.10 transistor CT 973B, 973B-ART.KT 10pcs .; USE The power supply current electrode of the instrument: the Concert Hall | *** | RUSSIA | 0.02 | 60,19 | *** | ***** | ***** |
2017-09-22 | 8541290000 | NPN Silicon Transistors With TRANSITION from the output power of at least 25W, operating speed MORE 3MHz are designed to amplify signals in electrical equipment: TRANSISTOR Ltd. "Saransk Plant of precision instruments" SZTP NOT The absence | *** | RUSSIA | 0.3 | 51,52 | *** | ***** | ***** |
2017-09-22 | 8541290000 | TRANSISTORS PURPOSE. HAVE encryption means (CRYPTOGRAPHY). NOT SCRAP ELECTRIC. NO MILITARY: designed for use in amplifiers and generators of electronic devices. GLOBAL HY ELECTRONICS TECHNOLOGY NO TPA | *** | RUSSIA | 0.7 | 5303,14 | *** | ***** | ***** |
2017-09-28 | 8541290000 | TRANSISTORS power dissipation 100BT Transistor: JSC "VSP-C": JSC "VSP-C" KT944A 20 | *** | RUSSIA | 0.6 | 1936,57 | *** | ***** | ***** |
2017-09-28 | 8541290000 | TRANSISTORS PNP germanium alloyed universal design for use in a switching device, a constant power dissipation 60W NO MORE, FOR USE IN INDUSTRY: Transistor: Transistor "Azon" fine "Azon" P215 213 "AZO | *** | RUSSIA | 12.85 | 505,6 | *** | ***** | ***** |
2017-11-02 | 8541290000 | TRANSISTORS NOT ELECTRICAL JOM, civil purposes, not radio-electronic means having no encryption function (CRYPTOGRAPHY) INTENDED FOR USE AS A COMPONENT FOR REPAIR OF HOUSEHOLD APPLIANCES SAMSUNG. | SAMSUNG | UKRAINE | 0.09 | 6,77 | Koryakova | ***** | ***** |