DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-01 | 8541600000 | A quartz oscillator is a crystal PEZOELEKRICHESKIE gathered in SMD-surface mount package, is designed to produce VIBRATIONS fixed frequency with a high temperature and time stability, WORKING | SILICON LABORATORIES, AKER, TAIWAN (CHINA) | *** | 0.432 | 1012,66 | MOSCOW | ***** | ***** |
2017-11-02 | 8541100009 | PULSED rectifier diodes SEMICONDUCTOR MATERIAL - SILICON VOLTAGE 1000, current 70 A, APPLIED INDUSTRIAL ELECTRONICS, | VISHAY SEMICONDUCTOR, VISHAY INTERTECHNOLOGY, NEXPERIA, TAIWAN SEMICONDUCTOR, CHINA | *** | 0.103 | 44,12 | MOSCOW | ***** | ***** |
2017-11-02 | 8541100009 | TVS-diode (suppressor) SEMICONDUCTOR MATERIAL - silicon, voltage 5.8 V Power Dissipation 1.5 kW, is designed to limit the voltage to a logic circuit | LITTELFUSE, VISHAY INTERTECHNOLOGY, TAIWAN SEMICONDUCTOR, VISHAY SEMICONDUCTOR, ANDORRA | *** | 0.008 | 12,18 | MOSCOW | ***** | ***** |
2017-11-08 | 8541600000 | A quartz oscillator is a crystal PEZOELEKRICHESKIE gathered in SMD-surface mount package, is designed to produce VIBRATIONS fixed frequency with a high temperature and time stability, WORKING | SILICON LABORATORIES, AKER, TAIWAN (CHINA) | *** | 0.431 | 896,38 | MOSCOW | ***** | ***** |
2017-11-08 | 8541100009 | TVS-diode (suppressor) SEMICONDUCTOR MATERIAL - SILICON VOLTAGE 26.7 V CURRENT 77.2 A, is designed to limit the voltage to a logic circuit | BOURNS, TAIWAN (CHINA) | *** | 0.112 | 445,11 | MOSCOW | ***** | ***** |
2017-11-08 | 8541401000 | LED, SEMICONDUCTOR MATERIAL - INDIA gallium nitride LED color - green, typical values ​​of 532 nm, INTENSITY MKD 140, the maximum voltage 3.8 V, 10 mA CURRENT USED IN INDUSTRIAL ELECTRONICS, | OSRAM OPTO SEMICONDUCTORS, TAIWAN (CHINA) | *** | 0.0001 | 7,49 | MOSCOW | ***** | ***** |
2017-11-10 | 8541100009 | DIODES: | TAIWAN SEMICONDUCTOR | *** | 0.0454 | 144,5 | MOSCOW | ***** | ***** |
2017-11-13 | 8541100009 | BRIDGE DIODE RECTIFIER (three-phase diode bridge), IS BUILT ELECTRONIC COMPONENT, SEMICONDUCTOR MATERIAL - SILICON, the maximum voltage of 600 V, current of 30 A, designed to convert AC | BOURNS, TAIWAN (CHINA) | *** | 0.019 | 25,37 | MOSCOW | ***** | ***** |
2017-11-14 | 8541100009 | DIODES: | TAIWAN SEMICONDUCTOR | *** | 1.5497 | 548,22 | MOSCOW | ***** | ***** |
2017-11-14 | 8541100009 | BRIDGE DIODE RECTIFIER (three-phase diode bridge) SEMICONDUCTOR MATERIAL - SILICON, the maximum voltage of 200 V, current 1 A, designed to convert AC to DC, SCOPE - INDUSTRIAL ELECTRONICS, | TAIWAN SEMICONDUCTOR, ON SEMICONDUCTOR, CHINA | *** | 0.379 | 286,12 | MOSCOW | ***** | ***** |