DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-11 | 8542326100 | Electronic integrated circuits: a flash memory (FLASH-EPROM ES) 256 MBIT, voltage 3.6 V, 133MHz, current 35 mA, CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR, TAIWAN (CHINA) CYPRESS SEMICONDUCTOR, TAIWAN (CHINA) S25FL256SAGMFIR01 MEMORY 6 | *** | CHINA | 0 | 17,07 | *** | ***** | ***** |
2017-09-12 | 8542326100 | Electronic integrated circuits: a flash memory (FLASH-ES PROM) 64 MBIT, voltage 3.6 V, 20 MHz, current 10 mA, MICROCHIP TECHNOLOGY MICROCHIP TECHNOLOGY, TAIWAN (CHINA) MICROCHIP TECHNOLOGY, TAIWAN (CHINA) AT45DB642-TI MEMORY 18 | *** | MEXICO | 0.01 | 766,93 | *** | ***** | ***** |
2017-09-28 | 8542326100 | Electronic integrated circuits: a flash memory (FLASH-EPROM ES) MBIT 4, the voltage 3.6 V, MACRONIX INTERNATIONAL CO LTD MACRONIX INTERNATIONAL, TAIWAN (CHINA) MACRONIX INTERNATIONAL, TAIWAN (CHINA) MX29LV040CTI-70G / TRAY MEMORY 408 | *** | GERMANY | 0.48 | 800,13 | *** | ***** | ***** |
2017-11-08 | 8542326100 | Electronic integrated circuits: | EON SILICON SOLUTION, TAIWAN (CHINA) | *** | 0.01 | 6,43 | MOSCOW | ***** | ***** |
2017-11-08 | 8542326100 | Electronic integrated circuits: | MACRONIX INTERNATIONAL, TAIWAN (CHINA) | *** | 0.995 | 1468,49 | MOSCOW | ***** | ***** |