DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-11-09 | 8542323900 | MICROCHIP Electronic integrated circuits, monolithic (dynamic random access memory (DRAM) with a storage capacity 8 Gb having no encryption function (CRYPTOGRAPHY) NOT SCRAP Electrics., For the industrial assembly EQUIPMENT "SAMSUNG" | SAMSUNG ELECTRONICS | *** | 70 | 256042,28 | Incheon | ***** | ***** |
2017-11-09 | 8542323900 | MICROCHIP Electronic integrated circuits, monolithic (dynamic random access memory (DRAM) with a storage capacity of 2 Gbit having no encryption function (CRYPTOGRAPHY) NOT SCRAP Electrics., For the industrial assembly EQUIPMENT "SAMSUNG" | SAMSUNG ELECTRONICS | *** | 2.414 | 2019,38 | Incheon | ***** | ***** |
2017-11-17 | 8542323900 | Integrated circuits, monolithic - dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY) is not contained. Ciphers. (Cryptography.) MEANS NOT SCRAP ELECTRIC, | SAMSUNG | *** | 13.86 | 465842,95 | Incheon | ***** | ***** |
2017-11-17 | 8542323900 | Integrated circuits, monolithic - dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY) is not contained. Ciphers. (Cryptography.) MEANS NOT SCRAP ELECTRIC, | SAMSUNG | *** | 57.936 | 48557,69 | Incheon | ***** | ***** |
2017-11-17 | 8542323900 | Integrated circuits, monolithic - dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY) is not contained. Ciphers. (Cryptography.) MEANS NOT SCRAP ELECTRIC, | SAMSUNG | *** | 60.225 | 45424,8 | Incheon | ***** | ***** |
2017-11-17 | 8542323900 | Integrated circuits, monolithic - dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY) is not contained. Ciphers. (Cryptography.) MEANS NOT SCRAP ELECTRIC, | MICRON SEMICONDUCTOR PRODUCTS | *** | 10 | 56631,13 | Incheon | ***** | ***** |
2017-11-24 | 8542323900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC dynamical random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY) is not contained. Ciphers. (Cryptography.) MEANS NOT SCRAP ELECTRIC, | SAMSUNG | *** | 7.165 | 26232,44 | Incheon | ***** | ***** |
2017-11-26 | 8542323900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC dynamical random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY) is not contained. Ciphers. (Cryptography.) MEANS NOT SCRAP ELECTRIC, | SK HYNIX ASIA PTE | *** | 24.48 | 28334,79 | Incheon | ***** | ***** |
2017-11-26 | 8542323900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC dynamical random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY) is not contained. Ciphers. (Cryptography.) MEANS NOT SCRAP ELECTRIC, | SAMSUNG | *** | 47.195 | 72082,66 | Incheon | ***** | ***** |