DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-05 | 8541210000 | TRANSISTOR ASSEMBLY POWER 0.6 W (COMPONENT ELECTRICAL EQUIPMENT NOT HOUSEHOLD, FOR INDUSTRIAL INSTRUMENT) without components of superconducting elements, 5 cards. Boxes. CO SPETS.MARK. INDIV.UPAK- + KA TRANSISTORS MAXIM INTEGRETED, NXP SEMICONDUCTOR, | *** | CHINA | 72 | 14593,88 | *** | ***** | ***** |
2017-09-05 | 8541210000 | TRANSISTORS, SUITABLE FOR USE IN ELECTRICAL ASSEMBLY FOR GENERAL PURPOSE: transistors, bipolar, POLARITY PNP, MAXIMUM collector-emitter voltage of 100 volts, silicon, Maximum DC collector current of 6A, BASE T | *** | CHINA | 0.7 | 40,58 | *** | ***** | ***** |
2017-09-06 | 8541210000 | TRANSISTORS, SUITABLE FOR USE IN ELECTRICAL ASSEMBLY FOR GENERAL PURPOSE-TYPE SEMICONDUCTOR SILICON: Transistor ASSEMBLY, products consisting of two bipolar transistors POLARITY NPN, Maximum Collector Current 0.2 A, MAK | *** | MALAYSIA | 0.01 | 2,22 | *** | ***** | ***** |
2017-09-06 | 8541210000 | TRANSISTORS, SUITABLE FOR USE IN ELECTRICAL ASSEMBLY FOR GENERAL PURPOSE-TYPE SEMICONDUCTOR SILICON transistor ASSEMBLY, products consisting of two bipolar transistors POLARITY NPN, MAXIMUM collector current 0.05 A, MAK | *** | MALAYSIA | 0 | 6,36 | *** | ***** | ***** |
2017-09-14 | 8541210000 | TRANSISTORS, SUITABLE FOR USE IN ELECTRICAL ASSEMBLY FOR GENERAL PURPOSE-TYPE SEMICONDUCTOR SILICON: MOSFET, N-CHANNEL, the maximum drain-source voltage (VDS) 20 volts, continuous drain current (ID) 3.9A, BODY SOT23-3, | *** | INDIA | 0.01 | 55,93 | *** | ***** | ***** |
2017-09-18 | 8541210000 | TRANSISTOR ASSEMBLY POWER 0.6 W (COMPONENT ELECTRICAL EQUIPMENT NOT HOUSEHOLD, FOR INDUSTRIAL INSTRUMENT) without components of superconducting elements 3 map. Boxes. CO SPETS.MARK. + INDIV.UPAK- SC TRANSISTORS not work on Surface acoustic | *** | TAIWAN CHINA | 42.3 | 5892,6 | *** | ***** | ***** |
2017-09-28 | 8541210000 | TRANSISTORS, SUITABLE FOR USE IN ELECTRICAL ASSEMBLY FOR GENERAL PURPOSE: MOSFET, N-CHANNEL, the maximum drain-source voltage (VDS) 300 VOLTS, silicon, continuous drain current (ID) .55A, BODY 6UDFN, dissipates MOSCHNOS | *** | TAIWAN CHINA | 0.6 | 1809,44 | *** | ***** | ***** |