DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-07 | 3818009000 | INP SUBSTRATE disc-shaped, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY INP SUBSTRATE | *** | CHINA | 0.51 | 4453,74 | *** | ***** | ***** |
2017-09-08 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 3 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0.17 | 3617,25 | *** | ***** | ***** |
2017-09-08 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 2 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0.03 | 1559,25 | *** | ***** | ***** |
2017-09-23 | 3818009000 | OTHER Chemical elements doped (indium arsenide), intended for use in electronics in the form of discs with a diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box,: idea | *** | CHINA | 5 | 7500 | *** | ***** | ***** |
2017-11-08 | 3818009000 | CHEMICAL COMPOUNDS doped for use in electronics - epitaxial wafers: 2-inch GREEN INGAN, WAVELENGTH 525 + 4 nm, thickness = 100 +/- 10 microns, the luminescence intensity> 280 MCD - 2 PCS. Epitaxial CM. complete | ABSENT | CHINA | 0.16 | 1162,07 | Maanshan | ***** | ***** |
2017-11-12 | 3818009000 | The substrate in the form of a disk, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY / | AXT | CHINA | 19.273 | 24236,62 | FREMONT | ***** | ***** |
2017-11-15 | 3818009000 | Monocrystalline wafers silicon carbide polished on both sides, vanadium-doped, semi-insulating, with the same conductivity over the entire surface of the plate to the ISP. As a basis for IZGOTOVLENIYAI heterostructures for microelectronics | SICC | CHINA | 2.36 | 38318,05 | JINAN | ***** | ***** |
2017-11-22 | 3818009000 | Chemical elements doped - indium arsenide for use in electronics, in the form of discs DIAMETER 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box, THEN | ABSENT | CHINA | 0.12 | 4500 | MOSCOW | ***** | ***** |
2017-11-25 | 3818009000 | The substrate in the form of a disk, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY / | AXT | CHINA | 21.18 | 50092,3 | FREMONT | ***** | ***** |