DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: bipolar transistors for use in telecommunica | *** | TAIWAN CHINA | 0 | 2,38 | *** | ***** | ***** |
2017-09-08 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR dissipation of 0.5W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel FAIRCHILD SEMICONDUCTOR CORPORATION FAIRC | *** | TAIWAN CHINA | 0.22 | 386,95 | *** | ***** | ***** |
2017-09-08 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,225VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Are packaged in blister packs in tape on the coil ON SEMICONDUCTOR ON SEMICONDUCTOR BC846 | *** | TAIWAN CHINA | 1.54 | 280,9 | *** | ***** | ***** |
2017-09-10 | 8541210000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, NPN-CHANNEL, power dissipation 0.1 | *** | TAIWAN CHINA | 0.01 | 0,4 | *** | ***** | ***** |
2017-09-10 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: bipolar transistors for use in telecommunica | *** | TAIWAN CHINA | 0.02 | 13,07 | *** | ***** | ***** |
2017-09-13 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W SYSTEMS FOR INDUSTRIAL ELECTRONICS: Bipolar transistors are single, free rate, power dissipation 0,33VT ARTICLE BCR512E6327-9000SHT. : INFINEON TECHNOLOGIES ABSENT 0 | *** | TAIWAN CHINA | 0.52 | 226,23 | *** | ***** | ***** |
2017-09-14 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on a printed circuit board for use in a radio-electronic equipment: FIELD insulated gate, PNP-CHANNEL, power dissipation 0.25 W max. Allowable current of 0.1 A, AI | *** | TAIWAN CHINA | 0 | 2,55 | *** | ***** | ***** |
2017-09-14 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on printed circuit boards for use in electronic equipment RADIO: FIELD insulated gate, NPN-CHANNEL, power dissipation 0.3W max. Permissible current of 0.09 A, MA | *** | TAIWAN CHINA | 0.01 | 28,66 | *** | ***** | ***** |
2017-09-18 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,25VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel DIOTEC SEMICONDUCTOR AG DIOTEC BC858C BC | *** | TAIWAN CHINA | 0.01 | 2,22 | *** | ***** | ***** |
2017-09-18 | 8541210000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 0,35VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel TRANSISTOR SEMICONDUCTOR POWER RA | *** | TAIWAN CHINA | 0.03 | 43,1 | *** | ***** | ***** |