DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-05 | 8542324500 | Electronic integrated circuits, storage devices, SRAM, MODEL FM28V020-SG, ARTICLE FM28V020-SG - 30 PCS. CUSTOM PACKAGING - TUBA. NOT SCRAP ELECTRIC, DO NOT WASTE. APPLY telecommunications equipment used for X: RA | *** | TAIWAN CHINA | 0.45 | 372,9 | *** | ***** | ***** |
2017-09-05 | 8542324500 | Electronic integrated circuits, storage devices, SRAM, MODEL IS61NLP25672, ARTICLE IS61NLP25672-200B1LI - 84 PCS. CUSTOM PACKAGING - TRAY. NOT SCRAP ELECTRIC, DO NOT WASTE. APPLY telecommunications equipment, use: UYu | *** | TAIWAN CHINA | 0.6 | 978,6 | *** | ***** | ***** |
2017-09-09 | 8542324500 | Electronic integrated circuits, memory devices, OTHER, NOT SCRAP EQUIPMENT, DOES NOT CONTAIN encryption function (CRYPTOGRAPHY); SCOPE: TELECOM. EQUIPMENT FOR INSTALLATION The FEE Memory (RAM) VOLTAGE: 1.4251.575, MEMORY 4 G, ART | *** | TAIWAN CHINA | 0.01 | 125,59 | *** | ***** | ***** |
2017-09-09 | 8542324500 | Electronic integrated circuits, memory devices, OTHER, NOT SCRAP EQUIPMENT, DOES NOT CONTAIN encryption function (CRYPTOGRAPHY); SCOPE: TELECOM. EQUIPMENT FOR INSTALLATION The FEE Memory (RAM) VOLTAGE: 1.4251.575, MEMORY 2 G, ART | *** | TAIWAN CHINA | 0.01 | 55,59 | *** | ***** | ***** |
2017-09-10 | 8542324500 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: monolithic integrated circuits, is a static random access memory random access, the SRAM memory type, capacity of 256 kbps, the Working | *** | TAIWAN CHINA | 0 | 24,85 | *** | ***** | ***** |
2017-09-11 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC): CYPRESS SEMICONDUCTOR CORPORATION WITHOUT TOV. MARK B / M | *** | TAIWAN CHINA | 1.35 | 1026 | *** | ***** | ***** |
2017-09-11 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC): CYPRESS SEMICONDUCTOR CORPORATION WITHOUT TOV. MARK B / M | *** | TAIWAN CHINA | 5.89 | 3420 | *** | ***** | ***** |
2017-09-14 | 8542324500 | Integrated circuits: Electronic integrated circuits monolith - a static random access memory for widespread use in industrial equipment NOT MILITARY and consumer electronics (NOT SCRAP ELECTRIC). In | *** | TAIWAN CHINA | 2.18 | 1132,19 | *** | ***** | ***** |
2017-09-15 | 8542324500 | Electronic integrated circuits - High-performance dual-port static random access memory "IDT71024S15TYGI" WITH THE 128KH8, the operating voltage of 5V is designed for universal application in the electronics industry. : SRAM | *** | TAIWAN CHINA | 0.68 | 517,5 | *** | ***** | ***** |
2017-09-19 | 8542324500 | Integrated circuits: Electronic integrated circuits monolith - a static random access memory for widespread use in industrial equipment NOT MILITARY and consumer electronics (NOT SCRAP ELECTRIC). UP | *** | TAIWAN CHINA | 0.15 | 128,82 | *** | ***** | ***** |