DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-06 | 8542326900 | MICROCHIP electronic integrated - storage devices that do not have the encryption function (CRYPTOGRAPHY) without encryption (cryptographic) means flash PROM ES with a storage capacity BOL. 512 MBIT NOT SCRAP ELECTRIC, FOR INDUSTRIAL MIC | *** | TAIWAN CHINA | 111.52 | 40777,12 | *** | ***** | ***** |
2017-09-07 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 8 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | 0.01 | 5 | *** | ***** | ***** |
2017-09-08 | 8542326900 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 16 Gbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): MICRON TECHNOLOGY WITHOUT TRADEMARK MICRON MT29F16G08AJADAWP-IT: D B / | *** | TAIWAN CHINA | 0.12 | 689,99 | *** | ***** | ***** |
2017-09-14 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 1 GB is approved for use in telecommunications equipment. Supply voltage | *** | TAIWAN CHINA | 0 | 135 | *** | ***** | ***** |
2017-09-14 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0.01 | 5,5 | *** | ***** | ***** |
2017-09-15 | 8542326900 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory capacity 1 GB, do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" Integrated circuits, monolithic, digital, flash-electro | *** | TAIWAN CHINA | 33.62 | 11875,8 | *** | ***** | ***** |
2017-09-30 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 16 GB is approved for use in telecommunications equipment. supply voltage | *** | TAIWAN CHINA | 0.02 | 31,5 | *** | ***** | ***** |
2017-11-12 | 8542326900 | Electronic integrated circuits Monolithic collected, SINGLE: electrically erasable programmable read-only memory (EEPROM FLASH-ES) with a storage capacity of 256 Gbps, DO NOT WASTE NOT | MICRON | TAIWAN CHINA | 7.29 | 79598,27 | VILNIUS | ***** | ***** |
2017-11-15 | 8542326900 | MICROCHIP electronic integrated - storage devices that do not have the encryption function (CRYPTOGRAPHY) without encryption (cryptographic) means flash PROM ES with a storage capacity BOL. 512 MBIT NOT SCRAP ELECTRIC, FOR INDUSTRIAL | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY | TAIWAN CHINA | 42.64 | 17887,43 | TAIPEI | ***** | ***** |
2017-11-17 | 8542326900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, ES FLASH EPROM memory capacity C 1Gbps, MODEL W25N01G, PART W25N01GVZEIG - 63 PCS. CUSTOM PACKAGING - Cut Tape. NOT SCRAP ELECTRIC, DO NOT WASTE. APPLY Telecommunication Equip | WINBOND | TAIWAN CHINA | 0.11 | 92,96 | MOSCOW | ***** | ***** |