| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541290000 | Transistors, phototransistor EXCEPT: Transistor SEMICONDUCTOR ASSEMBLY TYPE SEMICONDUCTOR - silicon, used in the manufacture electronic modules and dresses for various devices, power: 4 W DISPERSION NXP SEMICONDUCTORS NXP NXP NX745537715 | *** | CHINA | 1.8 | 40,14 | *** | ***** | ***** |
| 2017-09-03 | 8541290000 | Transistors, phototransistor EXCEPT: Transistor SEMICONDUCTOR ASSEMBLY TYPE SEMICONDUCTOR - silicon, used in the manufacture electronic modules and dresses for various devices, power: 4 W DISPERSION NXP SEMICONDUCTORS NXP NXP BONJHM5680 | *** | CHINA | 13.4 | 299,98 | *** | ***** | ***** |
| 2017-09-04 | 8541290000 | Transistors - Semiconductor devices, for voltage up to 1000 V, power dissipation MORE 1W are used in electronic equipment, TOTAL - 16000SHT. :: KLS ELECTRONIC CO, LTD NOT MARKED HOTTECH 14000 KLS ELECTRONIC CO, LTD KLS 200 is not defined.. | *** | CHINA | 0.86 | 593,99 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | TRANSISTORS PURPOSE. Designed for use in amplifiers and generators of electronic devices. Power dissipation 10 Tues. Not for military purposes. HAVE encryption means (CRYPTOGRAPHY) TOTAL 108 PCS. : Transistors TRANSISTOR | *** | CHINA | 1.08 | 1106,07 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS: state | *** | CHINA | 33.74 | 840,13 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS: state | *** | CHINA | 44.44 | 1355,42 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS: state | *** | CHINA | 52.56 | 578,16 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Transistors, EXCEPT phototransistor power dissipation 180 W TYPE SEMICONDUCTOR-silicon for use in the production of circuit boards of electronic devices: IXYS IXYS IXYS IXFH6N100F NO 30 | *** | CHINA | 0.18 | 177,65 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Other transistors, phototransistor EXCEPT: MOSFETs with channel N TYPE SMD HELD FOR DEVICES INDUSTRIAL ELECTRONICS. Power dissipation 69 Tues. Breakdown voltage of the drain-source 30, current 70 A, CASING SMD LF | *** | CHINA | 0.3 | 958,62 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | TRANSISTORS PURPOSE. Designed for use in amplifiers and generators of electronic devices. Power dissipation of 5-10 V. NOT MILITARY. HAVE encryption means (CRYPTOGRAPHY) TOTAL 43 PCS. : Transistors TRANSISTOR | *** | CHINA | 0.04 | 54,3 | *** | ***** | ***** |