Electronic Devices Import Data of Russia

Search Russia Import Export Data at Shipment Level

Lookup import statistics of Electronic Devices under HS Code 8541290000, which Russia imports from United States. Study market price & market size of Electronic Devices along with market share of Russian companies importing Electronic Devices from United States

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DATE HS_CODE Product Description TrademarkCountry Net Weight Statistical Cost Place Shipper NameConsignee Name
2017-09-058541290000SEMICONDUCTOR DEVICES: Field transistors, ARE NOT phototransistor power dissipation 400W is designed for surface mount board industrial electronic devices not SCRAP ELECTRIC TYPE SEMICONDUCTOR -: SILICON***UNITED STATES0.177117,25*************
2017-09-188541290000TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source 1 kV, 6.5 A LEAKAGE CURRENT, 160 POWER TSR. CDF***UNITED STATES0.0821,39*************
2017-09-188541290000TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. The breakdown voltage of the drain-source 40 V, 259 A CURRENT LEAK, power 156 Tues CDF***UNITED STATES0.1870,58*************
2017-09-198541290000Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS: state***UNITED STATES54.281546,98*************
2017-09-198541290000Transistor, IGBT Modules - RADIO, the active ingredient, which is a semiconductor element in a plastic rectangular body with three flexible output. Operating temperature up to 125C. USED ​​IN RADIO ELECTRONIC DEVICES AS: state***UNITED STATES1.6450,02*************
2017-09-248541290000Other transistors, phototransistor EXCEPT: MOSFETs with channel N type intended for devices of industrial electronics. VOLTAGE Drain-Source Breakdown 20 V LEAKAGE CURRENT 8 A POWER 21.9 CS. BODY SO-8. LOCATED ON TAPE PACKED***UNITED STATES0.015,22*************
2017-09-248541290000Other transistors, phototransistor EXCEPT: MOSFETs with channel P TYPE for single hole mounting on a printed circuit board adapted for devices of industrial electronics. VOLTAGE Drain-Source Breakdown 20 V CONTINUOUS LEAKAGE CURRENT 4 A POWER***UNITED STATES0.011,77*************
2017-11-198541290000SEMICONDUCTOR DEVICES: Field transistors, ARE NOT phototransistor power dissipation 400W is designed for surface mount board industrial electronic devices not SCRAP ELECTRIC.M / A-COMUNITED STATES0.322376,46RENO USA**********


Our electronic devices import data of Russia and market research report covers market priceof electronic devices and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of electronic devices in Russia. Few shipment records with a small number of important columns from Russia import data of electronic devices are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of electronic devices. To view more shipment records of electronic devices import data of Russia, you can set a filter by Country Name, HS Code and Place.

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