DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-11-13 | 8542399010 | Electronic integrated circuits monolithically assembled, SINGLE, NOT FOR FIRE AUTOMATIC, NOT MILITARY NOT SCRAP electrical equipment for use in electronic devices INDUSTRIAL | ONS | *** | 0.75 | 325 | SAINT PETERSBURG RUSSIA | ***** | ***** |
2017-11-13 | 8542399010 | Electronic integrated circuits monolithically assembled, SINGLE, NOT FOR FIRE AUTOMATIC, NOT MILITARY NOT SCRAP electrical equipment for use in electronic devices INDUSTRIAL | NXP | *** | 0.05 | 276,48 | SAINT PETERSBURG RUSSIA | ***** | ***** |
2017-11-13 | 8542399010 | Electronic integrated circuits monolithically assembled, SINGLE, NOT FOR FIRE AUTOMATIC, NOT MILITARY NOT SCRAP electrical equipment for use in electronic devices INDUSTRIAL | SILICON | *** | 0.51 | 342,72 | SAINT PETERSBURG RUSSIA | ***** | ***** |
2017-11-13 | 8542399010 | Electronic integrated circuits monolithically assembled, SINGLE, NOT FOR FIRE AUTOMATIC, NOT MILITARY NOT SCRAP electrical equipment for use in electronic devices INDUSTRIAL | TEXAS INSTRUMENTS | *** | 0.13 | 240 | SAINT PETERSBURG RUSSIA | ***** | ***** |
2017-11-13 | 8541290000 | Semiconductor devices: transistors, TYPE SEMICONDUCTOR - silicon, used in the manufacture electronic modules and dresses for various devices, power dissipation 1,65VT | NEXPERIA | *** | 1.02 | 2160 | SAINT PETERSBURG RUSSIA | ***** | ***** |
2017-11-13 | 8541210000 | Transistors, EXCEPT phototransistor power dissipation 0.8 W for use in the production of circuit boards of electronic devices, semiconductor-TYPE SILICON | DIODES | *** | 1.47 | 1680 | SAINT PETERSBURG RUSSIA | ***** | ***** |
2017-11-13 | 8542399010 | Electronic integrated circuits monolithically assembled, SINGLE, NOT FOR FIRE AUTOMATIC, NOT MILITARY NOT SCRAP electrical equipment for use in electronic devices INDUSTRIAL | ONS | *** | 0.19 | 140 | SAINT PETERSBURG RUSSIA | ***** | ***** |