DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-01 | 8541409000 | Photosensitive semiconductor devices, solar powered POWER Weather stations: SOLAR-6W, SOLAR BATTERY Weather stations ONSET COMPUTER CORPORATION ONSET ABSENT WITHOUT Reference SOLAR-6W 1 | *** | UNITED STATES | 1 | 329,41 | *** | ***** | ***** |
2017-09-06 | 8541409000 | OPTICAL SENSOR photosensitivity - RECEIVER. Operating voltage - 10-30 V, maximum current of 100 mA. Designed to repair and MAINTENANCE LINE METAL CUTTING MO861 optical sensor receiver, paired with optical emitters 42JT-E2EZB1 | *** | UNITED STATES | 0.12 | 152,96 | *** | ***** | ***** |
2017-09-12 | 8541290000 | Transistors, phototransistor NOT BLOCK transistor (6 pieces), soldered together, the VLT FOR FREQUENCY CONVERTERS, COMPLETE WITH FIXING,, DANFOSS LLC DANFOSS IGBT 176F8628 IGBT 2 | *** | UNITED STATES | 2.5 | 618,96 | *** | ***** | ***** |
2017-09-13 | 8541290000 | Transistors, EXCEPT phototransistor, 1W power dissipation MORE: SEMICONDUCTOR BIPOLAR TRANSISTOR, gathered in a ceramic housing with three ports, TYPE SEMICONDUCTOR - silicon, power dissipation 4,5VT; NOT SCRAP ELECTRIC; TRAN | *** | UNITED STATES | 0.11 | 16450 | *** | ***** | ***** |
2017-09-20 | 8541290000 | Transistors, phototransistor NOT BLOCK transistor (6 pieces), soldered together, the VLT FOR FREQUENCY CONVERTERS, COMPLETE WITH FIXING,, DANFOSS LLC DANFOSS IGBT 176F8628 IGBT 1 | *** | UNITED STATES | 1.35 | 309,1 | *** | ***** | ***** |
2017-11-09 | 8541409000 | Photosensitive Semiconductor equipment- infrared detectors. It is used for infrared detection in the spectrometer, research. | NEP | UNITED STATES | 0.25 | 2249,26 | NORTON | ***** | ***** |
2017-11-23 | 8541409000 | Photosensitive SEMICONDUCTOR DEVICES: ART: IS-0.5 INSB (O.5MM), MSL_12 - 1 PCS. | INFRARED ASSOCIATES | UNITED STATES | 1.94 | 3045 | STEWART | ***** | ***** |