DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542326100 | Electronic integrated monolithic circuit intra-PROGRAMMABLE configuration memory is approved for use in telecommunications equipment for PCB IC flash memory, Memory Type NOR, memory capacity of 64 Mbits BODY | *** | GERMANY | 4.4 | 8570 | *** | ***** | ***** |
2017-09-04 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS not integrated with the other components: an electrically erasable programmable read only memory (FLASH-EPROM ES) COLLECTED, SINGLE, with a storage capacity 8 MBIT; NOT SCRAP ELECTRIC:, | *** | GERMANY | 0.13 | 81,01 | *** | ***** | ***** |
2017-09-08 | 8542326100 | ES FLASH EEPROM (electrically erasable programmable read only memory), is an electronic integrated circuit having a function of storing information, with a storage capacity of 128 MBIT FOR PERSONAL COMPUTERS VOLTAGE 3 | *** | GERMANY | 1.27 | 1153,69 | *** | ***** | ***** |
2017-09-19 | 8542326100 | INTEGRATED ELECTRONIC MICROCIRCUITS, with a storage capacity is limited to 512 MBIT, CREATE ELECTROMAGNETIC INTERFERENCE: MONOLITHIC INTEGRATED CIRCUIT. The product is an electrically erasable programmable flash memory with a sequence of recording and accessing data | *** | GERMANY | 0 | 3,3 | *** | ***** | ***** |
2017-09-20 | 8542326100 | Electronic integrated circuits monolithic, active elements (diodes, transistors), gathered together with the conclusions, made on the single semiconductor chip that is designed for industrial electronics. NOT USED IN navigation: IN | *** | GERMANY | 0.01 | 6,08 | *** | ***** | ***** |
2017-09-28 | 8542326100 | Electronic integrated circuits: a flash memory (FLASH-EPROM ES) MBIT 4, the voltage 3.6 V, MACRONIX INTERNATIONAL CO LTD MACRONIX INTERNATIONAL, TAIWAN (CHINA) MACRONIX INTERNATIONAL, TAIWAN (CHINA) MX29LV040CTI-70G / TRAY MEMORY 408 | *** | GERMANY | 0.48 | 800,13 | *** | ***** | ***** |