DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 45 W | *** | CHINA | 0.02 | 24,8 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, power dissipation 125 | *** | CHINA | 1.05 | 146 | *** | ***** | ***** |
2017-09-02 | 8541100009 | SEMICONDUCTOR DIODES FOR PCB, FOR USE IN RADIO ELECTRONIC APPARATUS SHALL CREATE ELECTROMAGNETIC INTERFERENCE: diode modules, max. VOLTAGE: 20 V, max. Current Rating: 8.2 A SEMIKRON ELECTRONICS PVT. LTD SEMIKRON SKKD9 | *** | CHINA | 2.04 | 162 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode | *** | CHINA | 1.98 | 291 | *** | ***** | ***** |
2017-09-02 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensors OPTICAL represent Optocouplers FROM emitter and receiver of the infrared signal, collected in a single surface mount package on the board. SENSITIVITY | *** | CHINA | 0 | 2 | *** | ***** | ***** |
2017-09-02 | 8541409000 | Photosensitive semiconductor element CREATE ELECTROMAGNETIC INTERFERENCE: Semiconductor photodiodes are intended for electronic equipment, SENSITIVITY 700 nm, 5 V TOSHIBA SEMICONDUCTOR (THAILAND) CO, LTD NO TC. | *** | CHINA | 0.02 | 105 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS dissipation of 1 W, for mounting on printed circuit boards, FOR USE IN RADIO electronic apparatus CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, 150 V power dissipation | *** | CHINA | 1.4 | 156,15 | *** | ***** | ***** |
2017-09-02 | 8541300009 | Semiconductor thyristors, not creating disturbing electromagnetic field: thyristor semiconductor devices, runtime based on single crystal semiconductor with two PN junction and having two stable states; APPLY filtration equipment in C | *** | CHINA | 6.67 | 1173,46 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode | *** | CHINA | 0.52 | 60 | *** | ***** | ***** |
2017-09-02 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode | *** | CHINA | 0.33 | 21,82 | *** | ***** | ***** |