DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541100009 | Diode modules, PREDSTALYAET a pair of series-connected diodes, designed for installation in medical Idel - Apparatus of magnetic nerve stimulation MAGSTIM. Designed for those. SERVICE EQUIPMENT previously imported - APPARATUS "MAGSTIM | *** | JAPAN | 0.16 | 205,89 | *** | ***** | ***** |
2017-09-01 | 8541300009 | Thyristor units, which represent the two pairs of series-connected thyristors. Designed for installation in medical Idel - APPARATUS magnetic stimulation MAGSTIM. It imports for TEX. SERVICE EQUIPMENT previously imported - APPARATUS "MAGSTIM | *** | JAPAN | 0.68 | 424,38 | *** | ***** | ***** |
2017-09-05 | 8541409000 | Photosensitive semiconductor devices, including photovoltaic cells, collected or not collected in the module, whether or not incorporated into panels; Light-emitting diodes: Magnetic sensors (1MD00P20300AAH) LAUREL K4 | LAUREL K8. APPOINTED | *** | JAPAN | 2.03 | 2174,58 | *** | ***** | ***** |
2017-09-16 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 100 A | *** | JAPAN | 0.28 | 6,28 | *** | ***** | ***** |
2017-09-16 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PNP-CHANNEL, power dissipation 3 | *** | JAPAN | 0.4 | 9,12 | *** | ***** | ***** |
2017-09-16 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 1.5 V | *** | JAPAN | 1.74 | 39,29 | *** | ***** | ***** |
2017-09-16 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 1.25 | *** | JAPAN | 0.59 | 13,4 | *** | ***** | ***** |
2017-09-16 | 8541500000 | SEMICONDUCTOR DEVICES SHALL CREATE ELECTROMAGNETIC INTERFERENCE: semiconductor in the form of sensors on the Hall effect (Under external magnetic field to the sensor in a semiconductor material SENSOR ARISE transverse electric field), FOR | *** | JAPAN | 0.47 | 20,65 | *** | ***** | ***** |
2017-09-16 | 8541409000 | Photosensitive semiconductor elements that are not creating disturbing electromagnetic field: Semiconductor photodiodes are intended for electronic equipment, SENSITIVITY 530 nm, 5 V HAMAMATSU PHOTONICS KK HAMAMATSU 3LNDQ-0T1 3LNDQ-0T1 About | *** | JAPAN | 0.55 | 35 | *** | ***** | ***** |
2017-09-16 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode | *** | JAPAN | 0.18 | 4,04 | *** | ***** | ***** |