DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-02 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: bipolar transistors for use in telecommunica | *** | TAIWAN CHINA | 0 | 2,38 | *** | ***** | ***** |
2017-09-06 | 8541100009 | SEMICONDUCTOR DIODES FOR PCB, FOR USE IN RADIO ELECTRONIC APPARATUS SHALL CREATE ELECTROMAGNETIC INTERFERENCE: Schottky diodes for telecommunications equipment, is a semiconductor diode with a low dropout | *** | TAIWAN CHINA | 0.08 | 3,7 | *** | ***** | ***** |
2017-09-06 | 8541100009 | SEMICONDUCTOR DIODES FOR PCB, FOR USE IN RADIO ELECTRONIC APPARATUS SHALL CREATE ELECTROMAGNETIC INTERFERENCE: Zener diode, max. Voltage: 10V, max. Power dissipation 0.25 Tues. NOT AN ELECTRICAL CROWBAR. | *** | TAIWAN CHINA | 0.32 | 14,88 | *** | ***** | ***** |
2017-09-07 | 8541100009 | SEMICONDUCTOR DIODES FOR PCB, FOR USE IN RADIO ELECTRONIC APPARATUS SHALL CREATE ELECTROMAGNETIC INTERFERENCE: Zener diode, max. VOLTAGE: 5.6 V, max. Power dissipation 5W. NOT AN ELECTRICAL CROWBAR. ABOUT | *** | TAIWAN CHINA | 0.11 | 5,02 | *** | ***** | ***** |
2017-09-07 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. 3 A permissible current, | *** | TAIWAN CHINA | 0.07 | 1,52 | *** | ***** | ***** |
2017-09-07 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 100 A | *** | TAIWAN CHINA | 0.25 | 5,62 | *** | ***** | ***** |
2017-09-07 | 8541100009 | SEMICONDUCTOR DIODES FOR PCB, FOR USE IN RADIO ELECTRONIC APPARATUS SHALL CREATE ELECTROMAGNETIC INTERFERENCE: TVS- diodes for telecommunication equipment designed to limit dangerous overvoltages in ELECT | *** | TAIWAN CHINA | 0.06 | 2,49 | *** | ***** | ***** |
2017-09-07 | 8541100009 | SEMICONDUCTOR DIODES FOR PCB, FOR USE IN RADIO ELECTRONIC APPARATUS SHALL CREATE ELECTROMAGNETIC INTERFERENCE: TVS- diodes for telecommunication equipment designed to limit dangerous overvoltages in ELECT | *** | TAIWAN CHINA | 0.29 | 13,12 | *** | ***** | ***** |
2017-09-07 | 8541100009 | SEMICONDUCTOR DIODES FOR PCB, FOR USE IN RADIO ELECTRONIC APPARATUS SHALL CREATE ELECTROMAGNETIC INTERFERENCE: diode Zener diode is a semiconductor diode operating at reverse bias MODE breakdown | *** | TAIWAN CHINA | 0.54 | 23,16 | *** | ***** | ***** |
2017-09-07 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | TAIWAN CHINA | 2.85 | 76,34 | *** | ***** | ***** |