DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-03 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, MEMORY 8 MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" | WINBOND ELECTRONICS | TAIWAN CHINA | 15.58 | 2540,66 | TAIPEI | ***** | ***** |
2017-11-10 | 8542323100 | Microcircuits integrated, monolithic, Memory, DRAM, memory 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" | WINBOND ELECTRONICS | TAIWAN CHINA | 1.64 | 1255,4 | TAIPEI | ***** | ***** |
2017-11-15 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY | TAIWAN CHINA | 28.7 | 11926,84 | TAIPEI | ***** | ***** |
2017-11-17 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, MEMORY NOT MORE 512MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" | WINBOND ELECTRONICS | TAIWAN CHINA | 2.46 | 404,58 | TAIPEI | ***** | ***** |
2017-11-18 | 8542323100 | Integrated circuits, monolithic, digital, dynamic random access memory (DRAM) W9751G6KB-15 512MBIT 84 PINA, 1.7-1.9V SUPPLY VOLTAGE FOR MONITOR PROM.SBORKI LU28E590DS / RU, HAS encryption function / CRYPTOGRAPHY, PACKAGING (1-SPOOL 0 | WINBOND ELECTRONICS | TAIWAN CHINA | 2.33 | 1219,61 | TAIPEI | ***** | ***** |
2017-11-18 | 8542326100 | Integrated circuits, monolithic, digital, flash electrically erasable programmable read-only memory (flash EEPROM) W25Q64JVSSIQ, VOLUME 64Mbit, 8-pin input voltage 2.7-3.6V, TV MODELS FOR PROM.SBORKI UE43LS003AUXRU, HAS FUNCTIONS | WINBOND ELECTRONICS | TAIWAN CHINA | 1.47 | 685,84 | TAIPEI | ***** | ***** |
2017-11-22 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY | TAIWAN CHINA | 22.96 | 8955,41 | TAIPEI | ***** | ***** |
2017-11-24 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, MEMORY NOT MORE 512MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" | WINBOND ELECTRONICS | TAIWAN CHINA | 2.46 | 466,95 | TAIPEI | ***** | ***** |