| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-02 | 8542323100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of up to 256 Mbit Maximum Clock Frequency. | *** | CHINA | 0.02 | 40 | *** | ***** | ***** |
| 2017-09-02 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with memory volume to 64 MBIT, a maximum operating frequency | *** | CHINA | 0 | 3 | *** | ***** | ***** |
| 2017-09-05 | 8542323100 | Electronic integrated circuits: dynamic memory (DRAM), 256Mb, voltage 3.6 V, frequency 143 MHz, MICRON TECHNOLOGY INC MICRON TECHNOLOGY, CHINA MICRON TECHNOLOGY, CHINA MT48LC8M32B2TG-7IT MEMORY 20 | *** | CHINA | 0.01 | 195,42 | *** | ***** | ***** |
| 2017-09-06 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity is limited to 512 MBIT without departing NOT JOM, memory 256 MBIT: MICRON MICRON MT48LC32M8A2P-6A: G MT48LC32M8A2P-6A: G | *** | CHINA | 0.9 | 2205,76 | *** | ***** | ***** |
| 2017-09-13 | 8542323100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - dynamic random access memory (DRAM) DRAM with a storage capacity of 512 MBIT. (Operating temperature range: -45 ... + 85 ° C) (NOT SCRAP ELECTRIC): ALLIANCE MEMORY, INC. WITHOUT A TRADEMARK B / | *** | CHINA | 0.01 | 46,79 | *** | ***** | ***** |
| 2017-09-20 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity is limited to 512 MBIT without departing NOT JOM, memory 256 MBIT: MICRON MICRON MT48LC32M8A2P-6A: G MT48LC32M8A2P-6A: G | *** | CHINA | 0.09 | 99,3 | *** | ***** | ***** |