DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) with a storage capacity of 1 Mbit. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): INTEGRATED DEVICE TECHNOLOGY WITHOUT TRADEMARK B / N | *** | CHINA | 0.15 | 1296,84 | *** | ***** | ***** |
2017-09-02 | 8542324500 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE: monolithic integrated circuit is a static random access memory a random-access memory type SRAM, up to 4 MB WORKING | *** | CHINA | 0 | 7 | *** | ***** | ***** |
2017-09-02 | 8542324500 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: monolithic integrated circuits, is a static random access memory random access, the SRAM memory type, capacity of up to 144 MB, the Working | *** | CHINA | 0 | 48,4 | *** | ***** | ***** |
2017-09-04 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC): ALLIANCE MEMORY, INC. WITHOUT A TRADEMARK ALLIANCE M | *** | CHINA | 0.02 | 165,76 | *** | ***** | ***** |
2017-09-12 | 8542324500 | Static random access memory (SRAM), NOT SCRAP ELECTRIC EQUIPMENT, SPARE PARTS FOR CONTROL UNIT CASH REGISTERS: Microcircuits articles. RAM 4MB 10NS 3.3V 512KX8 FAST ASYNC STAT. RAM CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR CYPRESS | *** | CHINA | 25.51 | 10351,04 | *** | ***** | ***** |
2017-09-15 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) memory 4 C MBIT. (Operating temperature range: -40 ... + 125 C) (NOT SCRAP ELECTRIC): INTEGRATED SILICON SOLUTION, INC. WITHOUT PRESENTATION ZNA | *** | CHINA | 0.04 | 135,15 | *** | ***** | ***** |
2017-09-21 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) with a storage capacity of 128 kbits. (Operating temperature range: 0 ... + 70 ° C) (NOT SCRAP ELECTRIC): INTEGRATED DEVICE TECHNOLOGY IDT WITHOUT A TRADEMARK | *** | CHINA | 0.01 | 109,23 | *** | ***** | ***** |
2017-09-21 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) memory 4 C MBIT. (Operating temperature range: 0 ... + 70 ° C) (NOT SCRAP ELECTRIC): ALLIANCE MEMORY WITHOUT A TRADEMARK ALLIANCE MEMORY AS | *** | CHINA | 0 | 7,78 | *** | ***** | ***** |
2017-09-22 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) with a storage capacity of 64 MBIT. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC): CYPRESS SEMICONDUCTOR CORPORATION WITHOUT PRESENTATION ZNA | *** | CHINA | 0 | 99,58 | *** | ***** | ***** |
2017-09-28 | 8542324500 | Static random access memory (SRAM), NOT SCRAP ELECTRIC EQUIPMENT, SPARE PARTS FOR CONTROL UNIT CASH REGISTERS: Microcircuits articles. RAM 4MB 10NS 3.3V 512KX8 FAST ASYNC STAT. RAM CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR MISSING | *** | CHINA | 26.05 | 10525,48 | *** | ***** | ***** |