| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8542323100 | The storage device of electronic integrated: dynamic random access memory device comprising 64MBT MEMORY is a circuit electronic integrated monolithic SDRAM MEMORY CHIPS, The plastic housing With 90 VYVODAMI.NA ON | *** | CHINA | 1.95 | 895,74 | *** | ***** | ***** |
| 2017-09-02 | 8542323100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of up to 256 Mbit Maximum Clock Frequency. | *** | CHINA | 0.02 | 40 | *** | ***** | ***** |
| 2017-09-02 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with memory volume to 64 MBIT, a maximum operating frequency | *** | CHINA | 0 | 3 | *** | ***** | ***** |
| 2017-09-06 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity is limited to 512 MBIT without departing NOT JOM, memory 256 MBIT: MICRON MICRON MT48LC32M8A2P-6A: G MT48LC32M8A2P-6A: G | *** | CHINA | 0.9 | 2205,76 | *** | ***** | ***** |
| 2017-09-08 | 8542323100 | ELECTRONIC INTEGRATED CIRCUITS SINGLE monolithic, not combined with other components that are not for fire control, NOT MILITARY NOT SCRAP ELECTRIC; Designed for mounting dynamic random access memory (DRAM) | *** | CHINA | 0.37 | 206,64 | *** | ***** | ***** |
| 2017-09-12 | 8542323100 | Integrated circuits, monolithic, have no function encryption (CRYPTOGRAPHY), dynamic random access memory (DRAM), not radiation. NOT SCRAP ELECTRIC. MEMORY SIZE 64 MBIT. APPLICATION: CONSTRUCTION RADIOELECTRONIC: Equips | *** | CHINA | 2.15 | 7468,52 | *** | ***** | ***** |
| 2017-09-13 | 8542323100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - dynamic random access memory (DRAM) DRAM with a storage capacity of 512 MBIT. (Operating temperature range: -45 ... + 85 ° C) (NOT SCRAP ELECTRIC): ALLIANCE MEMORY, INC. WITHOUT A TRADEMARK B / | *** | CHINA | 0.01 | 46,79 | *** | ***** | ***** |
| 2017-09-20 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity is limited to 512 MBIT without departing NOT JOM, memory 256 MBIT: MICRON MICRON MT48LC32M8A2P-6A: G MT48LC32M8A2P-6A: G | *** | CHINA | 0.09 | 99,3 | *** | ***** | ***** |
| 2017-09-25 | 8542323100 | MONOLITHIC INTEGRATED analog ICs synchronous dynamic random access memory, memory capacity of 512 megabits, used in electronics in the calculating unit to set the parameters NOT APPLY AUTOMATIC EQUIPMENT FOR FIRE NOT: HAS | *** | CHINA | 0.37 | 780,48 | *** | ***** | ***** |
| 2017-09-29 | 8542323100 | Dynamic random access memory (DRAM) with a storage capacity to 512 Mbit NOT SCRAP ELECTRIC ARE FREE software containing encryption and cryptography): Electronic integrated circuits is monolithic - dynamic random access memory DEV | *** | CHINA | 1 | 612,97 | *** | ***** | ***** |