| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-02 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with memory volume to 4 GB, a maximum frequency of 12 | *** | CHINA | 0.11 | 149,6 | *** | ***** | ***** |
| 2017-09-02 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity to 16 GB, the maximum operating frequency of 6 | *** | CHINA | 0.76 | 2362,5 | *** | ***** | ***** |
| 2017-09-02 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of 2 GB to, a maximum frequency of 40 | *** | CHINA | 0.06 | 231 | *** | ***** | ***** |
| 2017-09-02 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of 2 GB to, maximum operating frequency of 13 | *** | CHINA | 0.01 | 18 | *** | ***** | ***** |
| 2017-09-06 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT without departing NOT JOM, MEMORY 4Gbit: MICRON MICRON MT41K256M16TW-107 AIT: P MT41K256M16TW-107 A | *** | CHINA | 0.09 | 73,39 | *** | ***** | ***** |
| 2017-09-12 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS COLLECTED single chip, dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT without departing NOT JOM, memory 4 HBT: MICRON MICRON EDB4432BBPA-1D-FR EDB4432BBPA-1D-FR EDB44 | *** | CHINA | 4 | 5094,59 | *** | ***** | ***** |
| 2017-09-12 | 8542323900 | Electronic integrated circuits, monolithic: dynamic random access memory (DRAM), collected, SINGLE, memory 2Gbps; NOT SCRAP electrical equipment, not military purposes; INTENDED SMD on the circuit: BOARD | *** | CHINA | 2.41 | 1008 | *** | ***** | ***** |
| 2017-09-21 | 8542323900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - dynamic random access memory (DRAM) DRAM with a storage capacity of 2 Gbit. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): MICRON TECHNOLOGY WITHOUT TRADEMARK B / N MT47 | *** | CHINA | 0.06 | 303,24 | *** | ***** | ***** |
| 2017-09-29 | 8542323900 | Storage devices, Other, dynamic random access memory (DRAM) with a storage capacity over 512 MBIT / NOT JOM ELECTRICAL /: MONOLITHIC INTEGRATED ELECTRONIC CHART - dynamic random access memory storage space C | *** | CHINA | 0.1 | 98,94 | *** | ***** | ***** |
| 2017-11-15 | 8542323900 | Integrated circuits, monolithic, NOT MILITARY NOT SCRAP ELECTRIC: MEMORY CHIPS (DDR), for PCB mounting. NO CONTENT encryption (cryptographic) means. NOT radiation resistant. | SAMSUNG | CHINA | 1.89 | 32000 | ST PETERSBURG | ***** | ***** |