DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - configuration memory (FLASH STORAGE DEVICE EEPROM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): XILINX INC XILINX B / N XCF04SVO20C B / 24 H | *** | CHINA | 0 | 193,49 | *** | ***** | ***** |
2017-09-01 | 8542326100 | Integrated circuits, monolithic, MEMORY, FLASH-PROM ES, NOT MORE MEMORY 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INVENTION "SAMSUNG" MIKROSKH.INTEGR.MONOLIT.PEREZAPISYVAEMAYA FLASH EEPROM MEMORY 100KB D / Cond | *** | CHINA | 0.01 | 7,93 | *** | ***** | ***** |
2017-09-01 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory 16 MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC FOR TECHNOLOGY "SAMSUNG" MIKROSKH.INTEGR.MONOLIT.PROGRAMMIRUEMAYA FLASH MEMORY 20KB EEPROM 24C15 D / KO | *** | CHINA | 0 | 1,32 | *** | ***** | ***** |
2017-09-01 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH-ES EEPROM memory 4 Mbit do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" Integrated circuits, monolithic, digital, flash-ELECT | *** | CHINA | 3.51 | 2241,99 | *** | ***** | ***** |
2017-09-02 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 256Mb is approved for use in telecommunications equipment. LIVE PIT | *** | CHINA | 0.01 | 35,82 | *** | ***** | ***** |
2017-09-02 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 64 Mbit is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.05 | 25 | *** | ***** | ***** |
2017-09-02 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16Mb is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.01 | 2,7 | *** | ***** | ***** |
2017-09-02 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16Mb is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.01 | 13,63 | *** | ***** | ***** |
2017-09-02 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents FLASH Memory capacity of 1 Mbit is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 4.94 | 3900 | *** | ***** | ***** |
2017-09-02 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 4MB is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0 | 1,2 | *** | ***** | ***** |