DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 128 GB is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.02 | 39,6 | *** | ***** | ***** |
2017-09-02 | 8542326900 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 32 GB is approved for use in telecommunications equipment. supply voltage | *** | CHINA | 0.09 | 90 | *** | ***** | ***** |
2017-09-03 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory DEVICE | *** | CHINA | 1.02 | 2807,42 | *** | ***** | ***** |
2017-09-11 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" MIKROSKH.INTEGR.MONOLIT. PROGRAMMABLE FLASH MEMORY | *** | CHINA | 0.01 | 9,61 | *** | ***** | ***** |
2017-09-11 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" MIKROSKH.INTEGR.MONOLIT. PROGRAMMABLE FLASH MEMORY | *** | CHINA | 0.01 | 10,87 | *** | ***** | ***** |
2017-09-11 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INVENTION "SAMSUNG" MIKROSKH.INTEGR.MONOLIT. PROGRAMMABLE MEMORY FLASH EEPROM AR12JSFSM | *** | CHINA | 0 | 18,2 | *** | ***** | ***** |
2017-09-12 | 8542326900 | Electronic integrated circuits, monolithic not integrated with other components SINGLE: an electrically erasable programmable read only memory (FLASH-EPROM ES) COLLECTED: C 2Gbit amount of memory; NOT SCRAP electrical equipment, not | *** | CHINA | 0.39 | 539,92 | *** | ***** | ***** |
2017-09-12 | 8542326900 | Electronic integrated circuits, monolithic not integrated with the other components: an electrically erasable programmable read only memory (FLASH-EPROM ES) COLLECTED, SINGLE, with a storage capacity 64GBIT; NOT SCRAP: Electrical, | *** | CHINA | 0.45 | 5020,56 | *** | ***** | ***** |
2017-09-12 | 8542326900 | Electronic integrated circuits, monolithic not integrated with other components SINGLE: an electrically erasable programmable read only memory (FLASH-EPROM ES) assembled, with volume MEMORY 8 Gbit; NOT SCRAP: Electrical, | *** | CHINA | 2.66 | 11986,5 | *** | ***** | ***** |
2017-09-17 | 8542326900 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory capacity 1 GB, do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC FOR TECHNOLOGY "SAMSUNG" chip. Integra. MONOLITH. Programmable, rewritable FLASH MEMORY SDI | *** | CHINA | 0.01 | 7,63 | *** | ***** | ***** |