| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8542329000 | Electronic integrated circuits Monolithic - memory (HAS encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC EQUIPMENT) Electronic integrated circuits monolith - a ferroelectric random access memory FOR A WIDE | *** | CHINA | 7.98 | 7934,41 | *** | ***** | ***** |
| 2017-09-01 | 8542329000 | Electronic integrated circuits Monolithic - memory (HAS encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC EQUIPMENT) Electronic integrated circuits monolith - a ferroelectric random access memory FOR A WIDE | *** | CHINA | 0.57 | 446,22 | *** | ***** | ***** |
| 2017-09-06 | 8542329000 | ELECTRONIC COMPONENTS FOR GENERAL USE FOR OWN PRODUCTION UNITS Electronic Equipment - Electronic integrated circuits, monolithic (chip) MICROCHIP buffer / line driver, voltage 1.65-3.6V TEXAS INSTRUMENTS TEXAS INS | *** | CHINA | 0.03 | 21,51 | *** | ***** | ***** |
| 2017-09-19 | 8542329000 | INTEGRATED MONOLITHIC analog ICs SRAM with the sampling in order, APPARATUS USED IN CIVIL do not apply to means of fire control, NOT the encryption function (CRYPTOGRAPHY): Microcircuits | *** | CHINA | 0.01 | 330,41 | *** | ***** | ***** |
| 2017-09-20 | 8542329000 | Electronic integrated circuits Monolithic Single-chip assembled, FEROMAGNITNAYA MEMORY NOT WASTE NOT SCRAP, AS PART OF THE PRODUCT DOES NOT CONTAIN encryption (cryptographic) means or elements. : CYPRESS CYPRESS FM25V10-G FM25V10-G FM25V10-G 5 | *** | CHINA | 0.05 | 55,83 | *** | ***** | ***** |
| 2017-09-21 | 8542329000 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - STORAGE DEVICE TYPE ferroelectric memory (F-RAM) C of 4 kbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): CYPRESS SEMICONDUCTOR WITHOUT TRADEMARK B / N FM24C | *** | CHINA | 0.01 | 20,09 | *** | ***** | ***** |
| 2017-09-22 | 8542329000 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic represents a ferroelectric memory device provided with random access (FRAM) With the memory to 64K VOLTAGE | *** | CHINA | 0 | 1,83 | *** | ***** | ***** |
| 2017-09-25 | 8542329000 | Memory (not JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. Memory EEPROM 512K 64K X 8 2.5V MICROCHIP ABSENT ABSENT 24LC512-I / SN 110 | *** | CHINA | 0.03 | 50,72 | *** | ***** | ***** |