DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-10 | 8541290000 | Transistors, phototransistor EXCEPT: SEMICONDUCTOR TRANSISTOR, for PCB mounting, POLUPROVODNIKA- TYPE SILICON, power dissipation 300W IXYS IXYS IXYS NO IXTA26P20P 200 | *** | JAPAN | 0.5 | 309,76 | *** | ***** | ***** |
2017-09-10 | 8541290000 | SEMICONDUCTOR DEVICES NOT SCRAP ELECTRIC: MOSFET-TRANSISTORS, N-CHANNEL USED IN INSTRUMENT for surface mounting. TYPE SEMICONDUCTOR - SILICON, voltage 650 V, power dissipation of 660 Tues IXYS IXYS IXYS NO I | *** | JAPAN | 8.21 | 650,92 | *** | ***** | ***** |
2017-09-14 | 8541290000 | Transistors, phototransistor EXCEPT: SILICON Bipolar transistors, power dissipation of 2.0 W is used as an element in SMD mounting on circuit boards PRINTED FOR RADIO packaged in blister packs TAPE IN 1000 item in plastic cassette 1-DRAWER TRANZIS | *** | JAPAN | 13.97 | 22859,02 | *** | ***** | ***** |
2017-09-16 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. Allowable current of 100 A | *** | JAPAN | 0.28 | 6,28 | *** | ***** | ***** |
2017-09-16 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, PNP-CHANNEL, power dissipation 3 | *** | JAPAN | 0.4 | 9,12 | *** | ***** | ***** |
2017-09-16 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 1.5 V | *** | JAPAN | 1.74 | 39,29 | *** | ***** | ***** |
2017-09-16 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 1.25 | *** | JAPAN | 0.59 | 13,4 | *** | ***** | ***** |
2017-09-16 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: transistor assembly in the case of the module, which is a three-electrode | *** | JAPAN | 0.18 | 4,04 | *** | ***** | ***** |
2017-09-16 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, P-CHANNEL, power dissipation 19.8 | *** | JAPAN | 0.05 | 1,08 | *** | ***** | ***** |
2017-09-16 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: FIELD insulated gate, N-CHANNEL, max. 3 A permissible current, | *** | JAPAN | 0.21 | 4,79 | *** | ***** | ***** |