| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-07 | 8541401000 | Light emitting diodes WHITE: MODEL SERIES LC040D "SPHWHAHDNK25YZT3D2"; DURIS E5 SERIES MODELS "GWJDSTS2.EM-H3H6-XX51-1" and "GWJDSTS2.EM-H2H5-XX37-1". TYPE SEMICONDUCTOR - gallium nitride. PSU, power cord and switch is not. : si | *** | CHINA | 6.31 | 3360,61 | *** | ***** | ***** |
| 2017-09-07 | 8541401000 | Light emitting diodes: SERIES OSLON SQUARE "GWCSSRM1.PM-MUNQ-40OSR5-1" and a series of OSLON SSL 80 "GHCS8PM1.24-4T2U-1." TYPE SEMICONDUCTOR - gallium nitride. PSU, power cord and switch is not. : LEDS ARE DESIGNED FOR A street | *** | CHINA | 7.01 | 8877,12 | *** | ***** | ***** |
| 2017-09-11 | 3816000000 | REFRACTORY COMPOSITIONS: anhydrous LETOCHNAYA MASS MARKS "BLM-02" CONTAINING ALUMINA (AL2O3) 39,11% by weight Silica (SIC) 17,54% by weight, carbon (C) 10.6% by weight MIXTURE AND SILICON CARBIDE... (SIC) AND SILICON NITRIDE (SI3N4) 13,4 wt.%; PARTY â„–SM17070602 LETOCHNAYA: MA | *** | CHINA | 20000 | 17500 | *** | ***** | ***** |
| 2017-09-11 | 8541401000 | Light emitting diodes: Light emitting diodes for consumer electronics. TYPE SEMICONDUCTOR - multielement (Aluminum-Gallium nitride) (NOT INTENDED FOR LIGHTING EQUIPMENT NOT SCRAP ELECTRIC). Packed in blisters tape on the reel | *** | CHINA | 0.27 | 295,27 | *** | ***** | ***** |
| 2017-09-14 | 2850002000 | Nitride CBN, as a dry powder gray color, grain size 1-3MKM is a compound BRA AND NITROGEN cubic crystal lattice; CHEMICAL FORMULA BN, CAS â„–10043-11-5, FOR USE AS COMPOSITE ale | *** | CHINA | 5 | 3125 | *** | ***** | ***** |
| 2017-09-19 | 2850002000 | Boron nitride powder, COMPOSITION: CBN 100%. REGISTRATION NUMBER CAS 10043-11-05, FORMULA CHEMICAL STRUCTURE - BN Assay of 100% is applied as COMPOSITE MATERIAL IN THE MANUFACTURE OF DESIGN (mechanical engineering | *** | CHINA | 8.96 | 8400 | *** | ***** | ***** |
| 2017-09-19 | 8541290000 | Semiconductor devices: transistors, TYPE SEMICONDUCTOR nitride-Galiev, ARE NOT phototransistor power dissipation 48 W: SUMITOMO ELECTRIC DEVICE INNOVATIONS, USA, INC. SUMITOMO SUMITOMO SGK5872-20A NO 5 | *** | CHINA | 0.01 | 876,49 | *** | ***** | ***** |
| 2017-10-07 | 6804221200 | Disks grinding HUAZUAN, which includes a case with a fixed thereto by means of pressing the abrasive layer of cubic boron nitride with an organic binder - 11 PCS. | HUAZUAN | CHINA | 5.32 | 55 | EKATERINBURG | ***** | ***** |
| 2017-11-15 | 8209002000 | Turn the insert (INSERT) cermet (alloy of tungsten carbide and boron nitride), is designed for machining of metals by TOCHENIYA or milling on CNC machines - 170 PCS. | VANTRANS | CHINA | 0.8 | 4284,45 | Moscow Sheremetyevo | ***** | ***** |
| 2017-11-15 | 8306290009 | Articles of base metal: MEDALS for hanging on a cup or for attaching to DESK FRAME (Material: zinc alloy coated with titanium nitride, zinc alloy, copper, nickel), UPAK.V KART.KOR, on pallets (PALLETS WEIGHT 10kg). | BIEMANS | CHINA | 758 | 8864,54 | Rien | ***** | ***** |