DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542319090 | Electronic integrated monolithic circuit is designed to work in a converter NODES ELECTRONIC COMPUTER TECHNOLOGY TELEKOMMUUNIKATSIONNOM IP EQUIPMENT 24-PORT DOWNLINKS GIGABIT ETHERNET (downlink) SWITCH INTEGRATION | *** | GERMANY | 0.6 | 2016 | *** | ***** | ***** |
2017-09-01 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | CHINA | 0.74 | 2362,6 | *** | ***** | ***** |
2017-09-01 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | CHINA | 0.44 | 187,39 | *** | ***** | ***** |
2017-09-05 | 8542399090 | INTEGRATED CIRCUITS email: M / JOB MANAGEMENT SCHEME FOR NODES FAX INTEGRAL; HYBRID PANASONIC CORPORATION PANASONIC PANASONIC B1HAGFF00015 NO 1 | *** | THAILAND | 0 | 0,37 | *** | ***** | ***** |
2017-09-08 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....) Of the electronic integrals | *** | THAILAND | 0.38 | 400,58 | *** | ***** | ***** |
2017-09-08 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....) Of the electronic integrals | *** | THAILAND | 0.18 | 991,03 | *** | ***** | ***** |
2017-09-08 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....) Of the electronic integrals | *** | THAILAND | 1.16 | 2511,25 | *** | ***** | ***** |
2017-09-12 | 8542399090 | INTEGRATED CIRCUITS email: M / CONTROL CIRCUIT PERFORMANCE RADIO NODES; TK PANASONIC ;; INTEGRAL; HYBRID. PANASONIC CORPORATION PANASONIC PANASONIC AN7236 NO 1 | *** | MALAYSIA | 0 | 1,34 | *** | ***** | ***** |
2017-09-12 | 8542399090 | INTEGRATED CIRCUITS email: M / CONTROL CIRCUIT PERFORMANCE RADIO NODES; INTEGRAL; HYBRID. PANASONIC CORPORATION PANASONIC PANASONIC RVIBA527 NO 1 | *** | MALAYSIA | 0 | 1,45 | *** | ***** | ***** |
2017-09-18 | 8542326100 | The memory device FLASH EEPROM MEMORY TO 512 MBIT (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE WITHOUT JOM elect AND Electrot nodes, not for secret and recording of information, without the module TPM.....) MICROCIRCUIT AM29F080B-90EF; TO | *** | MALAYSIA | 0.07 | 44,47 | *** | ***** | ***** |