DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-11 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | AMD | *** | 0.02 | 16,23 | HONG KONG | ***** | ***** |
2017-11-15 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | MICROCHIP TECHNOLOGY INC. | *** | 0.163 | 276,41 | HONG KONG | ***** | ***** |
2017-11-15 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | MICROCHIP TECHNOLOGY INC. | *** | 0.009 | 3,73 | HONG KONG | ***** | ***** |
2017-11-15 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | ADESTO TECHNOLOGIES CORPORATION, INC. | *** | 0.386 | 5443,11 | HONG KONG | ***** | ***** |
2017-11-15 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | ADESTO TECHNOLOGIES CORPORATION, INC. | *** | 1.998 | 6082,31 | HONG KONG | ***** | ***** |
2017-11-15 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | ALTERA CORPORATION | *** | 0.402 | 2096,41 | HONG KONG | ***** | ***** |
2017-11-21 | 8541600000 | Piezo electric crystals collected, for applications in microelectronics, are used in electronic products as a generator of clock frequency synchronizes nodes and units of the instrument: | SEIKO | CHINA | 0.21 | 65,3 | HONG KONG | ***** | ***** |
2017-11-21 | 8548909000 | Ferrite filters are designed for EMI filtering at different nodes ELECTRONIC EQUIPMENT IS NOT CROWBAR ELECTRICAL | MURATA ELECTRONICS NORTH AMERICA | *** | 0.46 | 120,75 | HONG KONG | ***** | ***** |
2017-11-22 | 8541600000 | Piezo electric crystals collected, for applications in microelectronics, are used in electronic products as a generator of clock frequency synchronizes nodes and units of the instrument: | SEIKO | CHINA | 0.21 | 65,3 | HONG KONG | ***** | ***** |
2017-11-24 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) | ALTERA CORPORATION | *** | 1.016 | 2475,74 | HONG KONG | ***** | ***** |