DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-02 | 8541290000 | Other transistors, phototransistor EXCEPT FOR THE PRODUCTION OF ELECTRICITY METERS FOR PRODUCTION OF ELECTRICITY METERS / NOT SCRAP, NOT WASTE / not double, not a military one. PURPOSE / NOT for equipment operating in explosive atmospheres / | INTERNATIONAL RECTIFIER | *** | 1.8 | 1200 | MOSCOW | ***** | ***** |
2017-11-08 | 8541290000 | Field-effect transistors, power dissipation 158 VT, the voltage source-drain 75, semiconductor - silicon are designed for logic circuits to control the parameters of their energy consumption, 118 | NEXPERIA, PHILIPPINES | *** | 0.011 | 29,62 | MOSCOW | ***** | ***** |
2017-11-14 | 8541290000 | Field-effect transistors, power dissipation 1.3 W, a voltage source-drain 20 V, semiconductor - silicon is designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, PHILIPPINES | *** | 0.0004 | 7,64 | MOSCOW | ***** | ***** |
2017-11-15 | 8541290000 | Other transistors, phototransistor EXCEPT FOR THE PRODUCTION OF ELECTRICITY METERS / NOT SCRAP, NOT WASTE / not double, not a military one. PURPOSE / NOT for equipment operating in explosive atmospheres / | INTERNATIONAL RECTIFIER | *** | 0.72 | 480 | MOSCOW | ***** | ***** |
2017-11-28 | 8541290000 | Field-effect transistors, power dissipation 1.3 W, 20 V, semiconductor - silicon are designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, INTERNATIONAL RECTIFIER, PHILIPPINES | *** | 0.002 | 33,97 | MOSCOW | ***** | ***** |
2017-11-28 | 8541290000 | Field-effect transistors, power dissipation 2 W, 20 V, semiconductor - silicon are designed for logic circuits to control the parameters of their energy consumption, | INFINEON TECHNOLOGIES, PHILIPPINES | *** | 0.006 | 95,01 | MOSCOW | ***** | ***** |