DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-22 | 8541210000 | Bipolar Transistor: "BCR08PNH6327" With NPN / PNP junction, C Power Dissipation 0.25 W, collector-emitter voltage 50V, the constant current of 100 mA, for use in the various switches, amplifiers and microelectronics. FLOOR TYPE | INFINEON | *** | 16.54 | 6997,29 | ST PETERSBURG | ***** | ***** |
2017-11-22 | 8541210000 | Transistors: - UNIVERSAL "BC846BLT1G" With NPN-junction, power dissipation 0.25 W, collector-emitter voltage 65V, collector current 100MA, for use in the various switches and amplifiers; - BIPOLAR "BC856B, 215" C P | ON SEMICONDUCTORS | *** | 2.1 | 317,7 | ST PETERSBURG | ***** | ***** |
2017-11-22 | 8541210000 | P-CHANNEL POWER MOS TRANSISTORS "FDN5618P", C 0.5 Tu power dissipation, drain-source voltage 60 V, gate-source voltage 20B, Imp. Drain current 10A, Predna. FOR A current converters, switches, loads diagram of the control PI | FAIRCHILD SEMICONDUCTOR | *** | 0.26 | 377,4 | ST PETERSBURG | ***** | ***** |
2017-11-27 | 8541210000 | UNIVERSAL Bipolar Transistor "BC847BLT1G" and "BC856BLT1G" With the PNP-junction, 0,225VT power dissipation, voltage POST. CURRENT collector-emitter voltage 45V and 65V, collector current 100MA, for use in the various switches and Y | ON SEMICONDUCTOR | *** | 26.795 | 5977,7 | ST PETERSBURG | ***** | ***** |