DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-08 | 8541290000 | FIELD TIR (metal-insulator-conductor) TRANSISTOR FIELD, N-CHANNEL, drain-source voltage of 40 V, the drain current of 18 A BODY SO-8, power dissipation 2.5W: INTERNATIONAL RECTIFIER LTD. INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IRF7842TRPBF IRF784 | *** | CHINA | 1.84 | 4586,93 | *** | ***** | ***** |
2017-09-11 | 8541290000 | Transistors (EXCEPT phototransistor), intended for use in electrical / NOT SCRAP ELECTRIC NOT ELECTRICAL COMPONENTS, NOT MILITARY /: TRANSISTOR INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER | *** | CHINA | 0.27 | 17,4 | *** | ***** | ***** |
2017-09-13 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 200W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF5210PBF B / 10 H | *** | CHINA | 0.06 | 21,75 | *** | ***** | ***** |
2017-09-13 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 2.5W INTERNATIONAL RECTIFIER WITHOUT TRADEMARK B / N IRF7416TRPBF B / 30 H | *** | CHINA | 0.07 | 32,37 | *** | ***** | ***** |
2017-09-18 | 8541290000 | FET TRANSISTOR IRF5210SPBF PRODUCED BY INTERNATIONAL RECTIFIER, IS MOSFET. Designed for use in telecommunications equipment, in the means of communication to reduce the interference level and reliability. It has | *** | CHINA | 0.19 | 82 | *** | ***** | ***** |
2017-09-18 | 8541290000 | FET TRANSISTOR IRF7809AVPBF PRODUCTION COMPANY INTERNATIONAL RECTIFIER, IS MOSFET. Designed for use in telecommunications equipment, in the means of communication to reduce the interference level and reliability. IT HAS | *** | CHINA | 5.71 | 6757,8 | *** | ***** | ***** |
2017-09-20 | 8541290000 | TRANSISTORS Power dissipation 1W MORE, DO NOT WASTE NOT SCRAP, power dissipation 2 W: INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IRF7341PBF IRF7341PBF IRF7341PBF 475 | *** | CHINA | 0.64 | 119,68 | *** | ***** | ***** |
2017-09-25 | 8541290000 | TRANSISTOR DESIGNED FOR USE IN telecommunications equipment for mounting on circuit boards N-channel MOS transistor, the dissipated power 115 W, CASING DPAK-3 PROCESS TEMPERATURE -55-150 ° C INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER INTER | *** | CHINA | 0.23 | 238,65 | *** | ***** | ***** |