DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-10 | 8541100009 | SEMICONDUCTOR DEVICES: DIODES FOR MOUNTING ELECTRONIC EXPANSION In: TOSHIBA CORP TOSHIBA TOSHIBA CMS04 (TE12L, Q, M) 3000 ON SEMICONDUCTOR CORP. ONSEMI ONSEMI P6SMB6.8AT3G 5000 | *** | UNITED STATES | 1.36 | 623,1 | *** | ***** | ***** |
2017-09-10 | 8541100009 | Semiconductor devices: diodes, for mounting in the electronic board: STMICROELECTRONICS. INCORP ST ST SM15T39A 10000 ON SEMICONDUCTOR CORP. ONS ONS MMSZ5233BT1G 9000 NEXPERIA USA INC. NEXPERIA NEXPERIA BZV55-B5V6,115 7500 | *** | UNITED STATES | 5.7 | 1441,75 | *** | ***** | ***** |
2017-09-13 | 8541100009 | DIODES - the semiconductor wafer is cut into the crystal (located in the same building), for devices of industrial electronics, ARE NOT diode grounders DEVICES catenary CLASSIFICATION CODE 6340112: DIODE VOLTAGE SUPPRESSION Transient | *** | UNITED STATES | 0 | 3,01 | *** | ***** | ***** |
2017-09-13 | 8541100009 | DIODES - the semiconductor wafer is cut into the crystal (located in the same building), for devices of industrial electronics, ARE NOT diode grounders DEVICES catenary CLASSIFICATION CODE 6340112: Schottky diodes, reverse voltage of 60 V, DIRECT | *** | UNITED STATES | 0.01 | 56,33 | *** | ***** | ***** |
2017-09-13 | 8541100009 | DIODES - the semiconductor wafer is cut into the crystal (located in the same building), for devices of industrial electronics, ARE NOT diode grounders DEVICES catenary CLASSIFICATION CODE 6340112: rectifier diodes, maximum reverse | *** | UNITED STATES | 0.19 | 75,03 | *** | ***** | ***** |
2017-09-18 | 8541100009 | DIODES, EXCEPT photodiodes and light-emitting diodes: diodes - a semiconductor wafer is cut into the crystal (located in the same building) for devices of industrial electronics DIODES - the semiconductor wafer is cut into the crystal (Location | *** | UNITED STATES | 0.02 | 2,93 | *** | ***** | ***** |
2017-09-18 | 8541100009 | DIODES, EXCEPT photodiodes and light-emitting diodes: diodes - a semiconductor wafer is cut into the crystal (located in the same building) for devices of industrial electronics DIODES - the semiconductor wafer is cut into the crystal (Location | *** | UNITED STATES | 1.02 | 2363,85 | *** | ***** | ***** |
2017-09-18 | 8541100009 | DIODES, EXCEPT photodiodes and light-emitting diodes: diodes - a semiconductor wafer is cut into the crystal (located in the same building) for devices of industrial electronics DIODES - the semiconductor wafer is cut into the crystal (Location | *** | UNITED STATES | 0.04 | 5,9 | *** | ***** | ***** |
2017-09-18 | 8541100009 | DIODES, EXCEPT photodiodes and light-emitting diodes: diodes - a semiconductor wafer is cut into the crystal (located in the same building) for devices of industrial electronics DIODES - the semiconductor wafer is cut into the crystal (Location | *** | UNITED STATES | 0.04 | 3,75 | *** | ***** | ***** |
2017-09-19 | 8541100009 | DIODES - RADIO, is a semiconductor diode (PN junction) into a plastic body having two wire ends, are used in electronic devices as an integral component. Operating temperature up to 125C. ART. STTH3012W 600SHT:. | *** | UNITED STATES | 0.21 | 8,58 | *** | ***** | ***** |