| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541290000 | Bipolar transistors power dissipation 313 BT MODEL SKW25N120, ARTICLE SKW25N120FKSA1 - 43 PCS. NOT SCRAP ELECTRIC, DO NOT WASTE. DATA products are used in telecommunications equipment. CUSTOM PACKAGING - TUBA. : "INFINEON" INFI | *** | JAPAN | 0.02 | 377,97 | *** | ***** | ***** |
| 2017-09-02 | 8541290000 | Semiconductor field-effect transistors are designed for use in power amplifiers TELECOMMUNICATIONS SECTORS / NOT SCRAP, WASTE NOT / NOT WAR, NOT DUAL-USE / NO for equipment operating in explosive atmospheres / SEMICONDUCTOR | *** | JAPAN | 4.84 | 74625,41 | *** | ***** | ***** |
| 2017-09-10 | 8541290000 | Semiconductor field-effect transistors are designed for use in power amplifiers telecommunications industry / NOT SCRAP, WASTE NOT, NOT MILITARY OR DUAL-USE NOT for equipment operating in explosive atmospheres / semiconductor | *** | JAPAN | 11.86 | 222812,68 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | Field-effect transistor with a controllable PN junction, for use in telecommunications equipment ,. CROWBAR ARE NOT ELECTRIC. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. scatter | *** | JAPAN | 0.06 | 43,86 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. : Calculated on the breakdown voltage of 30 V | *** | JAPAN | 0.01 | 22,46 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | MOS transistors for use in telecommunications equipment, ARE NOT ELECTRIC CROWBAR. INDUSTRIAL APPLICATIONS. NEW. Goods are packed in special shock-resistant packaging. Calculated on the breakdown voltage of 20 V, | *** | JAPAN | 0.01 | 19,42 | *** | ***** | ***** |
| 2017-09-30 | 8541290000 | Transistors for use in telecommunication devices / NOT SCRAP electrical equipment, not for use in explosive atmospheres MILITARY /: MOSFET. Transistor Polarity - P-CHANNEL. RATED gate voltage - +/- 20V. VOLTAGE | *** | JAPAN | 0.01 | 5,3 | *** | ***** | ***** |
| 2017-11-02 | 8541290000 | Semiconductor FET power dissipation 31.2VT, VOLTAGE 15V, to the power amplifier TELECOMMUNICATIONS INDUSTRY N / FLM1213-6F - 2 pcs / JOM NOT NOT WASTE / NOT MILITARY NOT DOUBLE PURPOSE / NOT TO EQUIPMENT. | SUMITOMO | JAPAN | 0.21 | 432,9 | YAMANASHI | ***** | ***** |
| 2017-11-22 | 8541290000 | MODULE transistors IS IGBT-transistor assembly with an insulated gate for controlling nutrition in telecommunications equipment. INPUT VOLTAGE 15.5, collector-emitter voltage 1700 V, OUTPUT | MITSUBISHI | JAPAN | 12 | 8789,59 | BERLIN | ***** | ***** |