DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541210000 | N-channel MOS transistors operating under saturated ASSEMBLY WITH BLOCKS temperature protection, overcurrent protection and voltage is intended to distribute power to the Car Alarm System MOSFET drain-source voltage Transit | *** | GERMANY | 0.2 | 639,29 | *** | ***** | ***** |
2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES, TYPE SEMICONDUCTOR - silicon, used in the manufacture electronic modules and dresses for various devices: transistor modules, power dissipation 30W: MITSUBISHI ELECTRIC MITSUBISHI MITSUBISHI RA30H4452M-101 is absent | *** | GERMANY | 1.18 | 667,59 | *** | ***** | ***** |
2017-09-04 | 8541290000 | SEMICONDUCTOR DEVICES, TYPE SEMICONDUCTOR - silicon, used in the manufacture electronic modules and dresses for various devices: transistors, power dissipation 125 W: STMICROELECTRONICS STMICROELECTRONICS STMICROELECTRONICS BU931T absent | *** | GERMANY | 0.08 | 380,99 | *** | ***** | ***** |
2017-09-04 | 8541290000 | TRANSISTOR FOR SEMICONDUCTOR PCB mounting. 1. The number of channels drain-source voltage of 30 V .: gate-source voltage of 2.2 V. 39 CONTINUOUS LEAKAGE CURRENT AMP. Resistance Drain-10 IOM. Power dissipation 28 VT.DIAPAZON THOSE WORKERS | *** | GERMANY | 0.08 | 1,95 | *** | ***** | ***** |
2017-09-05 | 8541290000 | TRANSISTORS FOR SEMICONDUCTOR POWER BOOST, generating and converting electrical signals into INSTRUMENT: TYPE SEMICONDUCTOR - silicon oxide (SIO2), power dissipation 125W SEMICONDUCTOR TRANSISTORS FOR GAIN, AND GENERATION | *** | GERMANY | 2.7 | 72 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistors for PCB mounting, field P-channel, power dissipation 2 W: transistor for PCB mounting, field P-channel, power dissipation 2 W INTERNATIONAL RECTIFIER IR IRF5806TRPBF NO 100 | *** | GERMANY | 0.01 | 0,76 | *** | ***** | ***** |
2017-09-06 | 8541210000 | TRANSISTOR DESIGNED FOR USE IN TELECOMMUNICATIONS EQUIPMENT BIPOLAR NPN transistors, the maximum collector-emitter voltage 50V, maximum collector current of 800mA, the cutoff frequency of 150MHz, the power dissipation of 500 MW, HOUSING FOR | *** | GERMANY | 0.18 | 1699,29 | *** | ***** | ***** |
2017-09-06 | 8541409000 | Photosensitive semiconductor devices, Photoelectric sensors, voltage 24 USED in the engineering industry to detect objects in the workplace, TYPE SEMICONDUCTOR - Transistor, NOT SCRAP ELECTRIC photoelectric | *** | GERMANY | 16.01 | 16435,27 | *** | ***** | ***** |
2017-09-06 | 8541409000 | Photosensitive semiconductor devices, Photoelectric sensors, voltage 24 USED in the engineering industry to detect objects in the workplace, TYPE SEMICONDUCTOR - Transistor, NOT SCRAP ELECTRIC photoelectric | *** | GERMANY | 0.28 | 200,1 | *** | ***** | ***** |
2017-09-06 | 8541409000 | Photosensitive semiconductor devices, Photoelectric sensors, voltage 24 USED in the engineering industry to detect objects in the workplace, TYPE SEMICONDUCTOR - Transistor, NOT SCRAP ELECTRIC FOTOELEKTR | *** | GERMANY | 0.04 | 68,98 | *** | ***** | ***** |